Printed semiconductor device and manufacturing method
A semiconductor, N-type semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as complex procedures, printing bottlenecks, substrate damage, etc.
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Embodiment 1
[0043] figure 2 It is a schematic structural diagram of a printed semiconductor device in Embodiment 1 of the present invention, such as figure 2 As shown, in this embodiment, the substrate 21 is made of glass with a thickness of 1mm; firstly, the conductive metal ink made of 0.5wt% gallium oxide is prepared, and the P ink made of poly 3,3'-dialkyltetrathiophene PQT Type semiconductor ink, N-type semiconductor ink made of ladder polymer BBL, etc., and insulating ink made of polystyrene. When making an N-channel field effect transistor, an N-type semiconductor 232 can be printed on the substrate 21 using N-type semiconductor ink, and then two P-type semiconductors 231 are printed on both sides of the N-type semiconductor 232, thereby forming two A PN junction; use conductive metal ink to print the gate G connecting the two P-type semiconductors; finally, use conductive metal ink to print the respective electrodes on the upper and lower ends of the N-type semiconductor 232, t...
Embodiment 2
[0046] image 3 It is a schematic structural diagram of a printed semiconductor device according to Embodiment 2 of the present invention, such as image 3 As shown, if it is necessary to make an N-type insulating field effect transistor, a P-type semiconductor substrate 31 can be printed first, and two high-concentration N-type regions 32 are printed on it; each electrode is printed with conductive metal ink as an electrode. The source S and the drain D; after that, between the drain and the source, an insulating ink, such as polyimide, is printed and covered to form an insulating layer; finally, a layer of metal ink is printed on the insulating layer as a gate Pole G. Thus, an N-type insulating field effect transistor is produced.
Embodiment 3
[0048] Figure 4 It is a schematic structural diagram of a printed semiconductor device according to Embodiment 3 of the present invention, such as Figure 4 As shown, in the present embodiment, the substrate 41 is made of glass with a thickness of 1 mm; first, prepare the P-type semiconductor ink made of poly 3,3'-dialkyltetrathiophene PQT, and the ink made of ladder polymer BBL, etc. N-type semiconductor ink; P-type semiconductor ink and N-type semiconductor ink are directly printed on the substrate 41 in point contact or surface contact, and the interface contact is the PN pole; thereafter, use 0.5wt The conductive metal ink made of % gallium oxide prints two leads, among which, the one connected to the P-type semiconductor is the positive electrode, and the one connected to the N-type semiconductor is the negative electrode; finally, use the shell or polyimide insulating material to connect them. It is packaged to form a semiconductor diode. The entire production process...
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Abstract
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