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Printed semiconductor device and manufacturing method

A semiconductor, N-type semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve problems such as complex procedures, printing bottlenecks, substrate damage, etc.

Active Publication Date: 2016-12-21
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a semiconductor device involves components such as conductors, semiconductors, and insulators. The existing technology is still difficult to ensure that all devices can be realized by direct printing. For example, even if organic semiconductor materials or insulating materials can be printed by spraying, the conductor part Printing is always a bottleneck
We know that conductors are generally metals such as copper, aluminum, etc., which have extremely high melting points. To achieve printing, they must first be melted and sprayed at extremely high temperatures, which obviously affects the low-melting point organic semiconductor materials on the device and even Substrate damage, therefore, this printing route is less likely to be achieved
For this reason, people propose organic or polymer conductor materials, but the conductivity of such materials is generally poor, and there are certain problems in solubilization and printability; Adding highly conductive nanoparticles to the polymer to achieve printable ink, but the actual manufacturing process needs to be printed first, and then undergo a certain chemical reaction and even sintering of this type of ink through a high temperature of more than hundreds of degrees, in order to finally deposit the required ink. conductor parts, so the whole procedure is still quite complicated
In short, so far, the domestic and foreign industries have not yet established a fast and simple semiconductor device that can be completely directly printed and directly formed and its manufacturing method.

Method used

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  • Printed semiconductor device and manufacturing method
  • Printed semiconductor device and manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 2 It is a schematic structural diagram of a printed semiconductor device in Embodiment 1 of the present invention, such as figure 2 As shown, in this embodiment, the substrate 21 is made of glass with a thickness of 1mm; firstly, the conductive metal ink made of 0.5wt% gallium oxide is prepared, and the P ink made of poly 3,3'-dialkyltetrathiophene PQT Type semiconductor ink, N-type semiconductor ink made of ladder polymer BBL, etc., and insulating ink made of polystyrene. When making an N-channel field effect transistor, an N-type semiconductor 232 can be printed on the substrate 21 using N-type semiconductor ink, and then two P-type semiconductors 231 are printed on both sides of the N-type semiconductor 232, thereby forming two A PN junction; use conductive metal ink to print the gate G connecting the two P-type semiconductors; finally, use conductive metal ink to print the respective electrodes on the upper and lower ends of the N-type semiconductor 232, t...

Embodiment 2

[0046] image 3 It is a schematic structural diagram of a printed semiconductor device according to Embodiment 2 of the present invention, such as image 3 As shown, if it is necessary to make an N-type insulating field effect transistor, a P-type semiconductor substrate 31 can be printed first, and two high-concentration N-type regions 32 are printed on it; each electrode is printed with conductive metal ink as an electrode. The source S and the drain D; after that, between the drain and the source, an insulating ink, such as polyimide, is printed and covered to form an insulating layer; finally, a layer of metal ink is printed on the insulating layer as a gate Pole G. Thus, an N-type insulating field effect transistor is produced.

Embodiment 3

[0048] Figure 4 It is a schematic structural diagram of a printed semiconductor device according to Embodiment 3 of the present invention, such as Figure 4 As shown, in the present embodiment, the substrate 41 is made of glass with a thickness of 1 mm; first, prepare the P-type semiconductor ink made of poly 3,3'-dialkyltetrathiophene PQT, and the ink made of ladder polymer BBL, etc. N-type semiconductor ink; P-type semiconductor ink and N-type semiconductor ink are directly printed on the substrate 41 in point contact or surface contact, and the interface contact is the PN pole; thereafter, use 0.5wt The conductive metal ink made of % gallium oxide prints two leads, among which, the one connected to the P-type semiconductor is the positive electrode, and the one connected to the N-type semiconductor is the negative electrode; finally, use the shell or polyimide insulating material to connect them. It is packaged to form a semiconductor diode. The entire production process...

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Abstract

The invention discloses a printed semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a substrate, a conductive metal ink, a semiconductor ink and an insulating ink, and the conductive metal ink contains 0.1wt% to 10wt% by mass of a low melting point liquid metal oxide and 0wt% to 90wt% conductive nanoparticles or semiconductor nanoparticles, the semiconductor ink contains 0.1wt% to 90wt% mass percentage of P-type or N-type semiconductor nanoparticles and organic matter, or the semiconductor ink contains 0.1wt% %~90wt% by weight of P-type or N-type semiconductor nanoparticles and polymers, the insulating ink contains organic matter or polymers. The printed semiconductor device and manufacturing method provided by the present invention can directly print low-melting-point metal inks and nanocomposites thereof that are liquid at around room temperature or at higher temperatures. Depending on the type of ink selected, various types of semiconductors can be realized. Direct printing of devices, including on-chip diodes, triodes, transistors, LEDs, lasers, etc.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a printed semiconductor device and a manufacturing method. Background technique [0002] Semiconductor materials are materials between conductors and insulators, and devices made from them, such as semiconductor diodes, triodes, field effect transistors, and thyristors, have extremely wide and key applications in a large number of electronic industry fields. For this reason, the manufacture around semiconductor devices has always been at the core of research in the field of electronics industry. As the name implies, a semiconductor is generally composed of a conductive part, a semiconductor part and an insulating part according to a certain structure. So far, the processing of semiconductor devices has been carried out with a very complicated manufacturing process. The procedures are quite complicated, the energy consumption is high, the pollution is serious, and t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40B41J3/00C09D11/52C09D11/03
CPCC09D11/03C09D11/52H10K71/135H10K71/611H10K85/141H10K85/1135
Inventor 刘静
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI