Densification method for carbon fiber reinforced silicon carbonitride ceramic composite material

A silicon carbide ceramic matrix and composite material technology is applied in the densification field of carbon fiber reinforced silicon nitride-silicon carbide ceramic composite materials, which can solve problems such as affecting the density of materials, improve thermal shock resistance and reduce thermal expansion coefficient. , the effect of shortening the preparation cycle

Active Publication Date: 2014-04-16
TAICANG PAIOU TECH CONSULTING SERVICE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when silicon vapor penetrates into the carbon-containing porous body, since silicon carbide in the porous body has a blocking effec

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] 1. Prepare C / SiC ceramic matrix composites by CVI or PIP;

[0018] 2. Continue to use CVI silicon carbide for C / SiC ceramic matrix composites. Due to the large cross gap between the fiber bundles, the CVI time will be extended to 25 hours;

[0019] 3. When CVI silicon carbide is densified to 85%, apply silicon powder on the surface of C / SiC, especially filling the large holes. Then dry

[0020] 4. Carry out nitriding treatment. The nitriding process is preliminary nitriding at 1250°C and secondary nitriding at 1450°C. Sintering with pure silicon nitride ceramic powder has the advantage of low sintering temperature;

[0021] 5. After the nitridation is completed, SiC coating is prepared on the CMC surface by CVD. The CVD time is 30 hours to complete the densification of the carbon fiber reinforced silicon nitride-silicon carbide ceramic matrix composite material.

Embodiment 2

[0023] 1. Prepare C / SiC ceramic matrix composites by CVI or PIP;

[0024] 2. Continue to use CVI silicon carbide for C / SiC ceramic matrix composites. Due to the large cross gap between the fiber bundles, the CVI time will be extended to 30 hours;

[0025] 3. When CVI silicon carbide is densified to 75%, apply silicon powder on the surface of C / SiC, especially filling the large holes. Then dry

[0026] 4. Carry out nitriding treatment. The nitriding process is preliminary nitriding at 1200°C and secondary nitriding at 1400°C. Sintering with pure silicon nitride ceramic powder has the advantage of low sintering temperature;

[0027] 5. After the nitridation is completed, CVD is used to prepare a SiC coating on the CMC surface. The CVD time is 25 hours to complete the densification of the carbon fiber reinforced silicon nitride-silicon carbide ceramic matrix composite material.

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Abstract

The invention provides a densification method for a carbon fiber reinforced silicon carbonitride ceramic composite material. The method comprises the following steps: firstly, preparing a C/SiC ceramic composite material by using CVI or PIP; performing CVI on the C/SiC ceramic composite material to carbonize silicon, and as the cross gap between fiber bundles is large, prolonging the CVI time to 20-30 hours ; when the silicon being subjected to carbonization is densified to 80-90% by CVI, brushing silicon powder on the C/SiC surface, and filling large holes particularly; performing nitridation processing after drying; after completion of the nitridation, preparing an SiC coating on the CMC surface through CVD for 20-30 hours to complete the densification of the carbon fiber reinforced silicon carbonitride ceramic composite material. Through the adoption of the densification method, the CMC preparation efficiency is improved, the coefficients of thermal expansion of matrixes are reduced, and the thermal shock resistance of CMC is improved.

Description

Technical field [0001] The invention relates to a method for densification of ceramic matrix composite materials, in particular to a method for densification of carbon fiber reinforced silicon nitride-silicon carbide ceramic composite materials. Background technique [0002] The coefficient of thermal expansion (CTE) of silicon nitride ceramic is 2.5~3.0×10 -6 / K, thermal conductivity 18.4w / m·K, low thermal expansion, high thermal conductivity, so that it has excellent thermal shock resistance. Silicon nitride ceramics have high strength, high hardness, abrasion resistance, oxidation resistance and good thermal shock and mechanical shock resistance. It was once considered by the material science community to be the most promising replacement for nickel-based alloys in the field of structural ceramics with excellent comprehensive performance A new type of material widely used in high-tech and high-temperature fields. However, it creeps at 1200°C, and the brittle transition temper...

Claims

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Application Information

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IPC IPC(8): C04B35/80C04B35/565C04B35/584C04B35/622
Inventor 陈照峰余盛杰
Owner TAICANG PAIOU TECH CONSULTING SERVICE
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