a reaction chamber

Abstract

The invention discloses a reaction chamber. The reaction chamber comprises a large tray, small trays, as well as a central gas inlet pipe, the large tray includes a support part, an annular part and a gas intake part, wherein the annular part is arranged on the periphery of the gas intake part, the support part is located below the annular part, the annular part is provided with M tray holes for placing the small trays, M is an integer greater than or equal to 1; the gas intake part is provided with M gas intake passages which are in one-to-one correspondence with the M tray holes, one ends of the gas intake passages are connected with the central gas inlet pipe, the other ends of the gas intake passages are connected with the corresponding tray holes, the bottom of each small tray is provided with a blade, the blade is driven by a gas entering the tray hole to drive the small tray to automatically rotate. The reaction chamber provides a composite rotating mechanism structure which combines revolution and autorotation, and is clear in structure, simple in processing and installation processes, and convenient in maintenance and use.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a reaction chamber. Background technique [0002] Vapor phase epitaxy (VPE) includes hydride vapor phase epitaxy (HVPE) and metal organic compound chemical vapor deposition (MOCVD). Vapor phase epitaxy technology mainly uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V Group, II-VI compound semiconductors and their thin-layer single-crystal materials of multi-component solid solutions can be used to prepare high-performance compound semiconductor single-crystal sheets. [0003] Epitaxial growth process equipment generally includes reaction chamber, gas transportation system, tail gas treatment system, control system, and substrate transmission system, etc., among which the reaction chamber is...

AI Technical Summary

Problems solved by technology

[0011] The present invention provides a reaction chamber, which is used to solve the problem that in the prior art, when realizing the revolution and rotation of the large tray and the small tray, the air cushion and the gas path structure used are too complicated, which leads to difficulties in the design, processing, installation, maintenance and use of process equipment. very difficult question

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