Method of manufacturing silicon carbide-containing heat storage material from waste silicon sludge

A technology of heat storage material and manufacturing method, applied in the direction of manufacturing tools, applications, heat storage equipment, etc., can solve the problems of high production cost, heat storage layer does not have thermal conductivity, heat accumulation characteristics and chemical resistance, etc., to achieve low cost effect

Inactive Publication Date: 2014-04-16
ENBION +1
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this heat storage layer does not have sufficient thermal conductivity, heat accumulation characteristics, and chemical resistance
Therefore, it is necessary to use a heat storage material containing silicon carbide, but it is actually difficult to use a heat storage material containing silicon carbide because the production cost of this material is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing silicon carbide-containing heat storage material from waste silicon sludge
  • Method of manufacturing silicon carbide-containing heat storage material from waste silicon sludge
  • Method of manufacturing silicon carbide-containing heat storage material from waste silicon sludge

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0055] Example 1: Preparation of a sintered silicon carbide body

[0056] Silica sludge obtained from domestic semiconductor wafer fabs is centrifuged to recover silicon. The above Table 1 shows the composition of impurities contained in the solid of the obtained silica mud, that is, the silica mud contains impurities in addition to silicon (Si). Subsequently, the obtained silica mud was heat-treated at a temperature of 300° C. for 120 minutes in a reducing atmosphere to remove oil on the obtained silica mud. As a result, the remaining oil content in the silica mud was 5% by weight.

[0057] Subsequently, the silica mud was mixed with carbon black (manufactured by Korea Carbon Black Co., Ltd.) having a particle diameter of 1 μm to form a pellet parison. In this case, the molar ratio of carbon black to silicon is 1:1.

[0058] In a vacuum atmosphere, the billets were sintered at 1350°C, 1650°C, 1750°C and 1850°C for 1 hour. In this case, the sintering temperature was incr...

example 2

[0064] Example 2: Preparation of silicon carbide powder

[0065] The solid of silica mud obtained by the same method as in Example 1 was mixed with a carbon source, and then heat-treated at a temperature of 1450° C. to 1850° C. for 1 hour. In this case, the heat treatment temperature was increased at a rate of 10°C / min. Silicon carbide (SiC) powder was prepared in the same manner as in Example 1, except that the SiC powder was not formed into a pellet shape.

[0066] The appearance of the silicon carbide (SiC) powder prepared in this way was photographed with an electron microscope.

[0067] Figure 4 A to Figure 4 D shows the SEM images of silicon carbide powder samples heat-treated at 1450°C, 1650°C, 1750°C and 1850°C, Figure 5 is a graph showing the XRD analysis results of silicon carbide (SiC) powder prepared at 1450°C.

[0068] From Figure 5 It can be seen that β-SiC powder has been formed (KICET5:5 in the figure). "Marktech" and "SIKA" in the figure represent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a method of manufacturing a silicon carbide-containing heat storage material, including the steps of: providing a silicon sludge produced from a silicon wafer cutting process; heat-treating the silicon sludge in a non-oxidative atmosphere to remove a part of oil; mixing the silicon sludge with a binder to prepare a slurry; extruding the slurry to form a honeycombed compact; and reaction-sintering the honeycombed compact at a temperature of 1300-1900 DEG C in a non-oxidative atmosphere. The method is advantageous in that a silicon carbide-containing heat storage material having high thermal conductivity, heat accumulation characteristics and chemical resistance can be manufactured at a low cost.

Description

technical field [0001] The invention relates to a method for recycling silicon mud, which is a by-product produced when crushing silicon wafers, and more specifically, to a method for manufacturing heat storage materials containing silicon carbide from waste silicon mud. Background technique [0002] Silicon is commonly used to make solar cells and semiconductor wafers, and wire saws are used to slice silicon ingots into wafer form. When slicing silicon ingots, a slurry containing silicon carbide with an average particle size of 10 μm is used, thus producing abrasive sludge containing silicon (main component), silicon carbide and other oxides. [0003] In this way, in the process of slicing silicon ingots, 10,000 tons or more of waste oil sludge is generated every year. It is predicted that the output of silicon mud will reach about 25,000 tons in 2012 according to the plan to increase the output of solar cell wafers. [0004] In the past, silica mud was buried in the grou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C04B35/565C04B18/12C04B35/64
CPCC04B2235/6581C04B35/62204C04B2235/6562C04B2235/656C04B26/285C04B28/001C04B38/0006C04B2235/424C04B2235/428C04B28/00C04B38/068C04B35/573F28F21/04F28D20/0056Y02E70/30Y02E60/14C04B18/165Y02W30/91C04B35/565B28B3/20C04B18/04C04B35/64
Inventor 李贤宰权禹泽金令姬金寿龙
Owner ENBION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap