Method for binding ITO target to copper back plate

A copper backplane and target technology, which is applied to electric heating devices, auxiliary devices, manufacturing tools, etc., can solve the problems affecting the stability of the coating process, the quality of the film formation, and the poor binding quality of the ITO target and the copper backplane. , to solve the uneven fluidity of indium, improve the binding quality, and avoid the effect of air holes on the bonding surface

Active Publication Date: 2014-04-23
WGTECH JIANGXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the ITO (indium tin oxide) sputtering coating process, when the ITO target is bound to the copper backplane, the target is not heated due to the deformation of the copper backplane and the oxidation of the brazing material indium during the brazing process. Many problems

Method used

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  • Method for binding ITO target to copper back plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Bonding of ITO target and copper backplane

[0051] 1. Drill and tap on the heating table so that two rows of screw holes are formed on the heating table, each row has three screw holes distributed at equal intervals, and the two rows of screw holes are opposite to each other. Drill holes on two bar-shaped copper briquetting blocks, drill 3 holes at equal intervals along the length of each bar-shaped copper briquetting block, and place the copper backplane on the heating table, respectively. Use the undrilled ends of the above two bar-shaped copper briquetting blocks to press the two ends of the copper back plate, use screws to pass through the holes on the two bar-shaped copper briquetting blocks and the screw holes on the heating table, and lock the copper The backplane is fixed on the heating table. Then, place an ITO target with a length×width×thickness of 200mm×120mm×6mm on the copper backplane;

[0052] 2. Heat the copper back plate from room temperature to 50°C...

Embodiment 2

[0055] Bonding of ITO target and copper backplane

[0056] 1. Drill and tap on the heating table so that two rows of screw holes are formed on the heating table, each row has three screw holes distributed at equal intervals, and the two rows of screw holes are opposite to each other. Drill holes on two strip-shaped aluminum compacts, drill three holes at equal intervals along the length of each strip-shaped copper compact, and place the copper backplane on the heating table. Use the undrilled ends of the above-mentioned two bar-shaped aluminum briquetting blocks to press the two ends of the copper back plate, use screws to pass through the holes on the two bar-shaped aluminum briquetting blocks and the screw holes on the heating table, and lock the copper The backplane is fixed on the heating table. Then, place an ITO target with a length×width×thickness of 200mm×120mm×6mm on the copper backplane;

[0057] 2. Heat the copper back plate from room temperature to 50°C at a heat...

Embodiment 3

[0060] Bonding of ITO target and copper backplane

[0061] 1. Drill and tap on the heating table so that two rows of screw holes are formed on the heating table, each row has three screw holes distributed at equal intervals, and the two rows of screw holes are opposite to each other. Drill holes in two bar-shaped brass briquettes, drill 3 holes at equal intervals along the length of each bar-shaped copper briquette on the edge of one end of the bar-shaped aluminum briquette, place the copper backplate on the heating table, Use the undrilled ends of the above two strip-shaped brass briquetting blocks to press the two ends of the copper back plate respectively, and use screws to pass through the holes on the two strip-shaped brass briquetting blocks and the screw holes on the heating table, and lock them tightly. Finally, fix the copper backplane on the heating table. Then, place an ITO target with a length×width×thickness of 200mm×120mm×6mm on the copper backplane;

[0062] 2...

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Abstract

The invention relates to a method for binding an ITO target to a copper back plate. The method for binding the ITO target to the copper back plate comprises the steps of fixing a heating table on the copper back plate, and placing the ITO target on the copper back plate; heating the copper back plate, enabling the ITO target to adhere to the copper back plate by brazing; placing a balancing weight on the surface of the ITO target far away from the copper back plate, and taking down the balancing weight after the ITO target is cooled. According to the method, the copper back plate is fixed on the heating table, the deformation of the copper back plate in the temperature rising process is reduced, flatness of the adhesion surface is improved, preparation are made for high-quality ITO target binding, the balancing weight is placed on the ITO target after brazing, the problem of unevenness of indium liquidity is solved, generation of air holes of the adhesion surface is avoided, and accordingly binding quality of the ITO target and the copper back plate is improved.

Description

technical field [0001] The invention relates to the technical field of ITO coating, in particular to a method for binding an ITO target and a copper backplane. Background technique [0002] In the ITO (indium tin oxide) sputtering coating process, when the ITO target is bound to the copper backplane, the target is not heated due to the deformation of the copper backplane and the oxidation of the brazing material indium during the brazing process. Many problems such as cracking and indium fluidity have affected the binding quality of the ITO target and the copper backplane, making the binding quality of the ITO target and the copper backplane poor, affecting the stability of the subsequent coating process and the quality of the film. Wait. Contents of the invention [0003] Based on this, it is necessary to provide a binding method for the ITO target and the copper backplane, so as to improve the binding quality of the ITO target and the copper backplane. [0004] A metho...

Claims

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Application Information

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IPC IPC(8): B23K1/20B23K1/00B23K3/04B23K3/08
CPCB23K1/00B23K1/19B23K3/08
Inventor 阳威张迅易伟华
Owner WGTECH JIANGXI
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