Solar battery and preparing method thereof
A solar cell and optoelectronic technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of not fundamentally improving battery efficiency, increasing battery light absorption, etc., and achieving the effects of low production cost, increased compactness, and increased height.
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Embodiment 1
[0053] A solar cell, which sequentially comprises from bottom to top: a 300 μm thick silicon sheet layer, a 10 nm thick graphene oxide layer, and a 3 nm thick graphene layer; wherein, the oxygen-to-carbon ratio in the graphene oxide layer is about 3.0;
[0054] The preparation method of described solar cell comprises the steps:
[0055] (1) Provide a silicon substrate, and use RCA standard cleaning steps to clean the silicon substrate to remove pollutants on it;
[0056] (2) Prepare a 10 mg / mL graphene oxide solution, spin-coat graphene oxide on the silicon substrate described in step (1) to obtain a graphene oxide interface layer, and obtain a structure of silicon sheet layer / graphene oxide layer; The operating conditions of the coating are to drop the graphene oxide solution on the silicon substrate, and then spin-coat at a speed of 2000 rpm for 60 seconds:
[0057] (3) calcining the structure of the silicon sheet layer / graphene oxide layer obtained in step (2) at 200°C for...
Embodiment 2
[0062] A solar cell, which comprises from bottom to top: a 300 μm thick silicon sheet layer, a 4 nm thick graphene oxide layer, and a 5.6 nm thick graphene layer; wherein the oxygen-to-carbon ratio in the graphene oxide layer is about 0.8;
[0063] The preparation method of described solar cell comprises the steps:
[0064] (1) Provide a silicon substrate, and use RCA standard cleaning steps to clean the silicon substrate to remove pollutants on it;
[0065] (2) Prepare a 5 mg / mL graphene oxide solution, pull the graphene oxide on the silicon substrate described in step (1) to obtain a graphene oxide interface layer, and obtain the structure of silicon sheet layer / graphene oxide layer; The operating conditions for pulling are: place the silicon wafer in the graphene oxide solution for 1 min, and then pull it up at a speed of 0.2 mm / s;
[0066] (3) Calcining the structure of the silicon sheet layer / graphene oxide layer obtained in step (2) at 600°C for 10 minutes to obtain a s...
Embodiment 3
[0071] A solar cell, which sequentially includes from bottom to top: a 300 μm thick silicon sheet layer, a 1 nm thick graphene oxide layer, and an 8 nm thick graphene layer; wherein the oxygen-to-carbon ratio in the graphene oxide layer is about 1.3;
[0072] The preparation method of described solar cell comprises the steps:
[0073] (1) Provide a silicon substrate, and use RCA standard cleaning steps to clean the silicon substrate to remove pollutants on it;
[0074] (2) Prepare a 0.1 mg / mL graphene oxide solution, spin-coat graphene oxide on the silicon substrate described in step (1) to obtain a graphene oxide interface layer, and obtain a silicon sheet layer / graphene oxide layer structure; The operating condition of spin coating is to drop the graphene oxide solution on the silicon substrate, then spin coating for 60 seconds at a speed of 2000 rpm;
[0075] (3) calcining the structure of the silicon sheet layer / graphene oxide layer obtained in step (2) at 400°C for 30 mi...
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