X-wave band 5-digit active local oscillation phase shifter

A phase shifter and X-band technology, applied in phase shifting network, multi-terminal pair network, etc., can solve problems such as complex circuit topology, high circuit precision requirements, and difficult design

Inactive Publication Date: 2014-04-23
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional implementations of phase shifters include switching transmission lines, quadrature hybrid coupling lines, and loading lines. The disadvantages of these implementations based on discrete components are: (1) The circuit topology is complex; (2) The design is difficult; (3) ) The process is difficult to process; (4) The phase shift accuracy is low; (5) The integration is low
The disadvantage of this method is that the accuracy of the circuit for adjusting the amplitude of the two quadrature signals is relatively high, and the design is difficult. This accuracy is directly related to the phase shift error of the phase shifter.

Method used

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  • X-wave band 5-digit active local oscillation phase shifter
  • X-wave band 5-digit active local oscillation phase shifter
  • X-wave band 5-digit active local oscillation phase shifter

Examples

Experimental program
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Embodiment Construction

[0042] Take the design of a 5-bit active phase shifter operating at 8GHz~12GHz as an example.

[0043] The block diagram of the phase shifter is as follows figure 1 As shown, each sub-circuit is as image 3 , Figure 4 , Figure 5 , Image 6 shown. Using TSMC0.13μmRFCMOS1P8M process, the simulation tool is CadenceSpectreRF, and the power supply voltage is 1.2V. Figure 5 The metal used in the transformer-type balun is M6. Compared with high-level metals, M6 has a larger parasitic resistance and a smaller parasitic capacitance between metals. Therefore, on the one hand, it can reduce the Q value and improve the bandwidth, and on the other hand, it can reduce the differential output. phase error.

[0044] Image 6Among them, R18-R25 uses polysilicon resistors, where R18=R19=R20=R21=R22=R23=R24=R25=100Ω. C13-C20 uses MIM capacitors, where C13=C14=C15=C16=177fF, C17=C18=C19=C20=145fF. Therefore, the poles of the first order are , the poles of the second order are . C...

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Abstract

The invention belongs to the technical field of integrated circuits and relates to a design of a phase shifter applied in an X-wave band (8-12 GHz) phased array receiver. The phase shifter consists of a transformer type balun, a multiphase filter, four sub phase shifters and a combiner circuit, wherein in the picture one, the phase shifting precision of the four sub phase shifters is 3-digit, and 8 phase shifting states are realized in the range of 0-360 degrees by the sub phase shifters through taking 45 degrees as a phase shifting step value; in the picture three, the four sub phase shifters and other circuits form an X-wave band phase shifter of which the phase shifting precision is 5-digit, and 32 phase shifting states are realized in the range of 0-360 degrees by the phase shifter through taking 11.25 degrees as a phase shifting step value. Firstly, a signal VIN in input at a single end, differential signals VIN+ and VIN- are obtained by the transformer type balun, a group of orthometric differential signals VIN_I+, VIN_I-, VIN_Q+ and VIN_Q- are obtained after the differential signals VIN+ and VIN- pass by the multiphase filter, the group of orthometric differential signals are the input of the sub phase shifters, and after the output signals of the four sub phase shifters are compounded by the combiner circuit, output signals VOUT+ and VOUT- are obtained.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a phase shifter used in X-band phased array receivers, which can be used in radio frequency integrated circuits such as radio frequency microwave phased array receivers that require high-precision phase shifters. Background technique [0002] With the continuous development of deep submicron integrated circuit technology, it is possible to realize a phased array system with high integration and low cost using complementary metal oxide semiconductor CMOS technology. The application of phased array technology in civil fields such as automotive radar (working frequency at 24GHz and 77GHz), short-distance high-speed wireless communication (working frequency at 60GHz) has begun to attract people's attention. The phase shifter is the most critical module in the phased array system. The traditional implementations of phase shifters include switching transmission...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H11/16
Inventor 李巍陈昌铭李宁
Owner FUDAN UNIV
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