Unlock instant, AI-driven research and patent intelligence for your innovation.

Equipment for handling airflow

A technology of equipment and airflow, applied in the field of equipment for processing airflow

Active Publication Date: 2016-04-06
EDWARDS LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a "dry" area of ​​the plasma reactor between the electrode (anode) and the reaction chamber, and the electrodes themselves require additional cleaning

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Equipment for handling airflow
  • Equipment for handling airflow
  • Equipment for handling airflow

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] refer to figure 1 , shows an apparatus 10 for processing a gas stream 12 . The device comprises a plasma generator 14 for generating a plasma flame 16 . A first inlet 18 delivers airflow 12 into the device. The reaction chamber 20 is located downstream of the plasma generator, wherein the gas flow is treated by the generated plasma flame. Some gases can be handled outside the reaction chamber.

[0013] The second inlet 22 receives a liquid 32 , typically water, into the device for creating a liquid weir 24 on the inner surface 26 of the reaction chamber 22 for resisting plasma process buildup of solid deposits from the inner surface 26 . The reaction chamber is roughly cylindrical in this example.

[0014] The fluid director is shown generally at 28 and is figure 2 and image 3 shown in more detail. The flow guide may be integral with the reaction chamber or may comprise an insert adapted to fit in the processing apparatus. The fluid director has an outer annul...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a device (10) for treating a gas stream (12). The plasma generator (14) generates a plasma flame (16). A first inlet (18) delivers airflow into the device. The reaction chamber (20) is located downstream of the plasma generator in which the gas is processed. A second inlet (22) receives liquid (32) into the device for creating a liquid weir (24) on the inner surface (26) of the reaction chamber for preventing accumulation of solid deposits on the inner surface. The fluid director (28) has an outer annular surface (30) for directing liquid over the inner surface, and an inner annular surface (34) in fluid communication with the outer surface so that the liquid flows from the outer surface to the inner surface to prevent Deposition on internal surfaces.

Description

technical field [0001] The invention relates to devices for treating air streams. The invention finds particular application in the treatment of gas streams exhausted from process chambers used in the semiconductor or flat panel display industries. Background technique [0002] A major step in the manufacture of semiconductor devices is the formation of thin films on semiconductor substrates by chemical reactions of vapor precursors. One known technique for depositing thin films on substrates is chemical vapor deposition (CVD), which is usually plasma enhanced. In this technique, process gases are supplied into a process chamber housing a substrate, and react to form a thin film on the surface of the substrate. Examples of gases supplied to the processing chamber to form a thin film include, but are not limited to: silane and ammonia for forming a silicon nitride film; silane, ammonia, and nitrous oxide for forming a SiON film; One of oxygen and ozone and TEOS; and Al(CH ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B01D53/32B03C3/78B03C3/82
CPCB01D53/32B03C3/78B03C3/82H05H1/341B01D2252/103B01D2257/106B01D2257/2027B01D2257/2047B01D2257/402B01D2257/406B01D2257/553B01D2258/0216B01D2259/818Y02C20/10H05H1/26H05H1/34C23C16/4404C23C16/45508C23C16/45563C23C16/513
Inventor S.A.沃罗宁C.J.P.克莱门茨J.L.比德
Owner EDWARDS LTD