Optical interference color change pigment and its preparation method and application
An optical interference and color-changing pigment technology, which is applied in the fields of color-changing fluorescent materials, chemical instruments and methods, inorganic pigment processing, etc., can solve the problem of insufficient particle dispersion, inability to fully realize the expression of interference colors, and inability to fully utilize the reflected light from the surface of the flakes. And other issues
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0017] Put the flake substrate mica (20-60 microns in size) into the attached powder sample attachment of the atomic layer deposition equipment, then place it in the reaction chamber, and evacuate to 10-16hPa. When the temperature of the reaction chamber reaches 150°C, the process of atomic layer deposition of zinc oxide layer (H layer) begins: the diethyl zinc precursor is injected into the reaction chamber with a pulse of high-purity nitrogen gas for 0.1 seconds, and is chemically adsorbed on the mica, and then passed through Inject high-purity nitrogen gas pulses for 3 seconds to clean the excess diethylzinc that is physically adsorbed on the substrate and in the reaction chamber; then inject water vapor pulses for 0.1 seconds to chemically adsorb to the first reaction substance, and then use high-purity nitrogen gas for 4 seconds Pulse to wash off excess water vapor. The above process completes one cycle of zinc oxide film deposition, and repeats the above process 271 time...
Embodiment 2
[0019] Put the flake substrate mica (20-60 microns in size) into the attached powder sample attachment of the atomic layer deposition equipment, then place it in the reaction chamber, and evacuate to 10-16hPa. When the temperature of the reaction chamber reaches 150°C, the process of atomic layer deposition of zinc oxide layer (H layer) begins: the diethyl zinc precursor is injected into the reaction chamber with a pulse of high-purity nitrogen gas for 0.1 seconds, and is chemically adsorbed on the mica, and then passed through Inject high-purity nitrogen gas pulses for 3 seconds to clean the excess diethylzinc that is physically adsorbed on the substrate and in the reaction chamber; then inject water vapor pulses for 0.1 seconds to chemically adsorb to the first reaction substance, and then use high-purity nitrogen gas for 4 seconds Pulse to wash off excess water vapor. The above process completes one cycle of zinc oxide film deposition, and repeats the above process 271 time...
Embodiment 3
[0021] Put the flake substrate mica (20-60 microns in size) into the attached powder sample attachment of the atomic layer deposition equipment, then place it in the reaction chamber, and evacuate to 10-16hPa. When the temperature of the reaction chamber reaches 150°C, the process of atomic layer deposition of titanium oxide layer (H layer) starts: the precursor of tetrakis(dimethylamine)titanium is injected into the reaction chamber with a pulse of high-purity nitrogen gas for 1 second, and is chemically adsorbed onto the mica , and then pass a 3-second high-purity nitrogen pulse to clean the excess tetrakis(dimethylamine)titanium in the reaction chamber that is physically adsorbed on the substrate; then pass a 0.1-second water vapor pulse to chemically adsorb to the first reaction substance, and then Purge off excess water vapor with a 4-second pulse of high-purity nitrogen. The above process completes one cycle of deposition of the titanium oxide film, repeating the above p...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com