Nitride semi-conductor component based on diamond substrate and manufacturing method thereof
A nitride semiconductor and diamond technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large thermal resistance, small thermal resistance, and large surface flatness, and achieve small thermal resistance and heat dissipation performance Good, high flatness effect
Inactive Publication Date: 2014-05-07
DYNAX SEMICON
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Problems solved by technology
The invention solves the problem of large thermal resistance at the interface between the nitride semiconductor layer and the diamond substrate, and has the advantages of small thermal resistance, good thermal conductivity and large surface smoothness
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[0044] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
[0045] The invention discloses a method for preparing a nitride semiconductor device based on a diamond substrate and the prepared nitride semiconductor device. figure 2 As shown, the method includes:
[0046] S1, providing a diamond substrate 1;
[0047] S2, growing the first nitride semiconductor layer 2 on the diamond substrate 1 by using hydride vapor phase epitaxy (HVPE, Hydride Vapor Phase Epitaxy);
[0048] S3 , growing a second nitride semiconductor layer 3 on the first nitride semiconductor layer 2 by metal-organic compound chemical vapor deposition (MOCVD, Metal-organic Chemical Vapor Depo...
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The invention discloses a nitride semi-conductor component based on a diamond substrate and a manufacturing method thereof. The method includes the following steps of (S1) providing the diamond substrate, (S2) growing a first nitride semi-conductor layer on the diamond substrate in an HVPE method, and (S3) growing a second nitride semi-conductor layer on the first nitride semi-conductor layer in an MOCVD method. A dielectric layer does not need to be introduced, hear resistance of the interfaces of nitride semi-conductors and heat resistance of the interface of the diamond substrate are small, and the heat dissipation performance of a material is good; the nitride semi-conductor layers grow in the HVPE method and the MOCVD method, and accordingly the advantages of being high in growth speed, good in growth quality and the like are achieved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nitride semiconductor device based on a diamond substrate and a preparation method thereof. Background technique [0002] With the continuous miniaturization and high speed of electronic products, it is becoming more and more urgent to reduce the thermal resistance of devices and improve their heat dissipation capabilities. In IC circuits, heat comes from many devices including transistors, resistors, capacitors, etc. Poor heat dissipation will lead to rapid temperature rise. The increase of temperature will cause the performance degradation of the device, and in severe cases, it will lead to the failure of the device, such as device burnout or short circuit. Reducing thermal resistance and improving heat dissipation are especially important for high-power and high-current devices. The methods currently used to improve the heat dissipation capacity of devices and syste...
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Patent Timeline
Login to View More IPC IPC(8): H01L21/205H01L29/06
CPCH01L21/02376H01L21/0254H01L21/0262H01L21/02631H01L29/2003
Inventor 张乃千裴风丽
Owner DYNAX SEMICON