Gas Shower Device Having Gas Curtain And Apparatus For Depositing Film Using The Same

Abstract

A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.

Description

technical field [0001] The invention relates to a gas spraying technology, in particular to a gas spraying device capable of generating an air curtain and a film deposition device thereof. Background technique [0002] The gas showerhead design of metal organic chemical vapor deposition (MOCVD) is the main factor affecting the uniformity of the gas flow field and the coating rate. At present, the design of the gas shower head is mainly arranged on the top of the process chamber, and includes a chip carrier with a cover placed inside the chamber. The gas spraying head sprays the reaction gas toward the chips on the chip carrier from above the chip carrier. [0003] When MOCVD is applied to the epitaxy process of light-emitting diodes, the uniformity and stagnation time of the gas flow field of the reactive gas sprayed by the gas spraying head will be one of the key technologies to determine the color temperature of light-emitting diodes (LED binning) and reduce costs and sav...

AI Technical Summary

Problems solved by technology

[0005] Although the pumping of the vacuum pump can improve the uniformity of the gas flow field, but in the process, when the reaction gas is sprayed onto the chip through the gas spray head, the reaction gas will be drawn away quickly due to the operation of the vacuum pump, which will cause The stagnation time of the reaction gas in the reaction zone in the chamber is shortened

When the reaction gas cannot stagnate in the reaction chamber and is drawn out of the chamber by the vacuum pump, the utilization rate of the reaction gas will be reduced, thereby affecting the coating efficiency

In addition, the closer to the pumping position in the cavity, the lower the concentration of the reaction gas, which will also affect the uniformity of the wavelength distribution at the edge of the wafer.

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