GaN (gallium nitride)-based LED (light emitting diode) preparing method

Abstract

The invention discloses a GaN-based LED preparing method and relates to the field of photoelectric technologies. The GaN-based LED preparing method comprises the following steps of 1), depositing an epitaxial GaN layer on a substrate; 2) evaporating a transparent conducting film on the surface of the epitaxial GaN layer through an electron beam evaporation method; 3) etching an N-type GaN area and a scribe line area on the surface of a device; 4) manufacturing a metal electrode on the surfaces of the N-type GaN area and the scribe line area respectively through an exfoliation and evaporation process; 5) fabricating a layer of dielectric film on the surface of the N-type GaN area and the scribe line area through an exfoliation and sputtering process; 6) covering a passive film on the surface of the device through PCVD (Plasma Chemical Vapour Deposition) and ICP equipment etching method. Compared with the prior art, the GaN-based LED preparing method can effectively improve light-extraction efficiency of an LED due to the fact that a layer of dielectric film is added to the transparent conducting film.

Description

technical field [0001] The invention relates to the field of photoelectric technology, in particular to a preparation method of gallium nitride-based light-emitting diodes. Background technique [0002] Gallium nitride-based materials are the most commonly used method for preparing LED chips. Various light sources prepared by gallium nitride-based light-emitting diodes have the advantages of energy saving, environmental protection, cold light source, high color rendering index, fast response speed, small size and long working life, etc. Highlight the advantages. [0003] Gallium nitride is mainly epitaxially grown on sapphire substrates, SiC substrates, and Si substrates, among which sapphire substrates are the mainstream, and the epitaxial layers include N-GaN, MQW, and P-GaN. In the prior art, LED chip technology mainly includes mesa etching, fabrication of transparent conductive film, fabrication of metal electrodes, fabrication of passivation film, etc. The transparen...

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Problems solved by technology

Therefore, the difference in refractive index between the transparent conductive film and the passivation film or packaging material is about 0.5, which greatly affects the light output efficiency of the LED.

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