GaN (gallium nitride)-based LED (light emitting diode) preparing method

A light-emitting diode, gallium nitride-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting the light-emitting efficiency of LEDs, and achieve the effect of improving light-emitting efficiency

Inactive Publication Date: 2014-05-21
TONGFANG OPTO ELECTRONICS +1
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Problems solved by technology

Therefore, the difference in refractive index between the transparent conductive film and the passivatio

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  • GaN (gallium nitride)-based LED (light emitting diode) preparing method
  • GaN (gallium nitride)-based LED (light emitting diode) preparing method
  • GaN (gallium nitride)-based LED (light emitting diode) preparing method

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[0018] see Figure 1 to Figure 6 , using Al as the material of the dielectric film 6 2 O 3 For example, its refractive index is about 1.70, the transparent conductive film 3 is made of ITO, and the steps of the preparation method of the present invention are:

[0019] An epitaxial gallium nitride layer 2 is deposited on the sapphire substrate 1, wherein the epitaxial gallium nitride layer 2 includes an N-GaN layer, an active layer, a P-GaN layer, and the like.

[0020] A transparent conductive film 3 is evaporated on the surface of the epitaxial gallium nitride layer 2 by using electron beam evaporation equipment.

[0021] The surface of the device is coated with photoresist, exposed, and developed, and the N-type gallium nitride region and the scribe line region 4 are etched with ITO etching solution, and then the scribe line region 4 is etched by ICP equipment, the photoresist is removed, and the N at moderately high temperatures 2 Medium annealed.

[0022] Accor...

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Abstract

The invention discloses a GaN-based LED preparing method and relates to the field of photoelectric technologies. The GaN-based LED preparing method comprises the following steps of 1), depositing an epitaxial GaN layer on a substrate; 2) evaporating a transparent conducting film on the surface of the epitaxial GaN layer through an electron beam evaporation method; 3) etching an N-type GaN area and a scribe line area on the surface of a device; 4) manufacturing a metal electrode on the surfaces of the N-type GaN area and the scribe line area respectively through an exfoliation and evaporation process; 5) fabricating a layer of dielectric film on the surface of the N-type GaN area and the scribe line area through an exfoliation and sputtering process; 6) covering a passive film on the surface of the device through PCVD (Plasma Chemical Vapour Deposition) and ICP equipment etching method. Compared with the prior art, the GaN-based LED preparing method can effectively improve light-extraction efficiency of an LED due to the fact that a layer of dielectric film is added to the transparent conducting film.

Description

technical field [0001] The invention relates to the field of photoelectric technology, in particular to a preparation method of gallium nitride-based light-emitting diodes. Background technique [0002] Gallium nitride-based materials are the most commonly used method for preparing LED chips. Various light sources prepared by gallium nitride-based light-emitting diodes have the advantages of energy saving, environmental protection, cold light source, high color rendering index, fast response speed, small size and long working life, etc. Highlight the advantages. [0003] Gallium nitride is mainly epitaxially grown on sapphire substrates, SiC substrates, and Si substrates, among which sapphire substrates are the mainstream, and the epitaxial layers include N-GaN, MQW, and P-GaN. In the prior art, LED chip technology mainly includes mesa etching, fabrication of transparent conductive film, fabrication of metal electrodes, fabrication of passivation film, etc. The transparen...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/44
CPCH01L33/44H01L2933/0025
Inventor 李宁宁王立彬蔡炯祺
Owner TONGFANG OPTO ELECTRONICS
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