GaN (gallium nitride)-based LED (light emitting diode) preparing method
A light-emitting diode, gallium nitride-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting the light-emitting efficiency of LEDs, and achieve the effect of improving light-emitting efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0018] see Figure 1 to Figure 6 , using Al as the material of the dielectric film 6 2 O 3 For example, its refractive index is about 1.70, the transparent conductive film 3 is made of ITO, and the steps of the preparation method of the present invention are:
[0019] An epitaxial gallium nitride layer 2 is deposited on the sapphire substrate 1, wherein the epitaxial gallium nitride layer 2 includes an N-GaN layer, an active layer, a P-GaN layer, and the like.
[0020] A transparent conductive film 3 is evaporated on the surface of the epitaxial gallium nitride layer 2 by using electron beam evaporation equipment.
[0021] The surface of the device is coated with photoresist, exposed, and developed, and the N-type gallium nitride region and the scribe line region 4 are etched with ITO etching solution, and then the scribe line region 4 is etched by ICP equipment, the photoresist is removed, and the N at moderately high temperatures 2 Medium annealed.
[0022] Accor...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap