Method for fabricating multi-wavelength silicon-based hybrid laser array by double exposure technology

Abstract

The invention discloses a method for preparing a multi-wavelength silicon-based hybrid laser array by secondary exposure technology. The method includes the steps: 1) preparing needed optical gratings on silicon layers of SOI (silicon on insulator) wafers by the aid of the secondary exposure technology; 2) preparing a plurality of silicon waveguides with different widths in a direction perpendicular to the optical gratings on the silicon layers of the SOI wafers to obtain a silicon waveguide array; 3) depositing a metal layer outside a set area of each silicon waveguide and two sides of the silicon waveguide on the corresponding SOI wafer to serve as a bonding area; 4) preparing a multiple quantum well optical gain structure array; 5) taking a surface which is closest to each optical gain area in the multiple quantum well optical gain structure array as a bonding surface, and aligning and bonding the optical gain area in the multiple quantum well optical gain structure array and optical coupled areas corresponding to the silicon waveguides in the silicon waveguide array to obtain the multi-wavelength silicon-based hybrid laser array. The method has the advantages of simple and mature process, lost cost and high reliability.

Description

technical field [0001] The invention relates to a silicon-based hybrid laser in the field of silicon-based optoelectronic devices and a preparation method thereof, in particular to a method for fabricating gratings on silicon waveguides with different widths by using a double exposure technique, thereby realizing a multi-wavelength silicon-based hybrid laser array. Background technique [0002] In recent years, with the development of optical interconnection and silicon-based optoelectronic integration technology, research on silicon-based light sources, especially silicon-based electrically pumped lasers, has attracted more and more attention. Recently, a method that enables electrically pumped silicon-based lasers, namely the bonding method, has been proposed. This method is to bond the currently developed semiconductor laser structure on the silicon waveguide, and then couple the light in the laser structure into the silicon waveguide, thereby realizing the silicon-based ...

AI Technical Summary

Problems solved by technology

In addition, this method of making the modulation grating on the silicon waveguide, that is, the optical coupling surface of the hybrid laser, not only solves the complex problem of making the grating on the multi-quantum well optical gain structure, but also makes the grating realize the hybrid laser. Better modulation effect improves the performance of the device

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