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Laser lift-off method for flexible electronic application of sapphire substrate of gallium nitride LED

A sapphire substrate, laser lift-off technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of lack of chemical etchant for sapphire, and achieve the effect of a simple and fast method

Inactive Publication Date: 2014-05-28
WUXI JINGKAI TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the hardness of sapphire and the lack of effective chemical etchant, the application of the first two methods above is limited.

Method used

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  • Laser lift-off method for flexible electronic application of sapphire substrate of gallium nitride LED
  • Laser lift-off method for flexible electronic application of sapphire substrate of gallium nitride LED

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Embodiment Construction

[0022] The principle of action of laser lift-off is based on the difference in bandgap between gallium nitride and sapphire. Sapphire has an optical bandgap of 8.7 eV, and GaN has an optical bandgap of 3.5 eV. Light with wavelengths between 143 nm and 354 nm will pass through sapphire but be absorbed by GaN. When light in this range is incident from the sapphire substrate, it will pass through the sapphire and be absorbed by the gallium nitride in the interface region to generate heat. If this light is emitted by a laser with high power and short action time, enough heat can be generated in the interface area to decompose gallium nitride into metal gallium and nitrogen, and because the laser action time is very short, the heat is too late to travel far. The decomposed GaN is only a few hundred nanometers thick near the interface and does not damage the core region of the GaN LED. After irradiation, the interface region will have only a layer of gallium metal left over from th...

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Abstract

The invention discloses a laser lift-off method for flexible electronic application of a sapphire substrate of a gallium nitride LED. According to the laser lift-off method, lasers with high power and very short action time are emitted, and sufficient heat is generated in an interface area, so that gallium nitride is decomposed into metal gallium and nitrogen; besides, due to the fact that the action time of the lasers is very short, the heat is concentrated, only the gallium nitride which is hundreds of nanometers thick nearby an interface is decomposed, and a core area of the gallium nitride LED cannot be damaged; after being irradiated, the interface area only has one layer of the metal gallium left after decomposition of the gallium nitride, and the metal gallium enables the sapphire substrate to be connected with the gallium nitride; heating is conducted so that the gallium nitride and the sapphire substrate can be separated; a diluted hydrochloric acid solution is used for removing the residual metal gallium on the gallium nitride after separation. Compared with the prior art, the sapphire substrate of a whole LED array can be lifted off and transferred effectively without change by means of the simple and rapid laser lift-off method.

Description

technical field [0001] The invention discloses a laser stripping method for the flexible electronics application of a gallium nitride LED sapphire substrate, and in particular relates to using a laser ablation technology to separate gallium nitride from a sapphire substrate in a gallium nitride diode manufacturing process. Background technique [0002] Light-Emitting Diode (LED for short) is a semiconductor electronic component that can emit light. Mainly divided into organic light-emitting diodes and inorganic light-emitting diodes. Inorganic LED body materials mainly include gallium (Ga), arsenic (As), phosphorus (P), etc., and diodes made of their compounds can radiate visible light when electrons and holes recombine. Among them, gallium nitride is the most widely used LED material, mainly used to manufacture blue LEDs. [0003] For gallium nitride (GaN) materials, since the substrate single crystal has not been solved for a long time, it is mainly grown by heteroepitax...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/007H01L33/0075H01L33/0093
Inventor 黄伟李海鸥于宗光
Owner WUXI JINGKAI TECH
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