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Raised grain type sapphire substrate and method for manufacturing raised grain type sapphire substrate

A sapphire substrate, wave pattern technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of not obtaining the optimal light extraction efficiency, and achieve the effect of reducing the price and improving the extraction efficiency

Active Publication Date: 2014-06-11
HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many types of PSS, including substrates with different patterns, such as sapphire substrates with conical, truncated, triangular, and truncated prisms. However, these sapphire patterned substrates have not been optimal in actual test results. light extraction efficiency

Method used

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  • Raised grain type sapphire substrate and method for manufacturing raised grain type sapphire substrate
  • Raised grain type sapphire substrate and method for manufacturing raised grain type sapphire substrate
  • Raised grain type sapphire substrate and method for manufacturing raised grain type sapphire substrate

Examples

Experimental program
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Effect test

preparation example Construction

[0026] In addition, a method for preparing a corrugated sapphire substrate as above is provided here, including the following steps:

[0027] Step 1: Coating photoresist on the sapphire substrate;

[0028] Step 2: Expose, develop, and bake the photoresist with a concentric photolithography plate to form a photolithography pattern on the photoresist;

[0029] Step 3: using an inductively coupled plasma etching machine to perform dry etching, so that the sapphire substrate has a wave pattern structure distributed in an array, and the center top of the wave pattern structure is a triangular cone;

[0030] Step 4: remove the residual photoresist, and clean the sapphire substrate.

[0031] As a further improvement, the photoresist is a cylindrical positive or negative photoresist with a thickness of 1.6-3.0 μm, more preferably a photoresist with a thickness of 2.0-2.2 μm.

[0032] As a further improvement, the concentric circle photoresist plate is composed of at least three equi...

Embodiment example 1

[0037] Coat a positive photoresist with a thickness of 2 μm on the sapphire substrate; use a concentric photolithography plate with an outer diameter of the inner ring of 0.8 μm, an outer diameter of the middle ring of 1.4 μm, and an outer diameter of the outer ring of 2.0 μm. The resist is exposed for 180ms, then developed, and baked at 120° C. for 5 minutes to form a photolithographic pattern on the photoresist. Subsequently, an inductively coupled plasma etching machine (ICP) was used for dry etching. The flow ratio of the first etching parameters BCl3 and Ar was 10, the etching time was 360s, and the power of the lower electrode was 50W. The flow rate ratio of BCl3 and Ar is 100, the etching time is 120s, and the power of the lower electrode is 240W. Finally, the remaining photoresist is removed with a glue remover, and then the sapphire substrate is cleaned with concentrated sulfuric acid and hydrogen peroxide. In the obtained corrugated sapphire substrate, the angle θ o...

Embodiment example 2

[0039] Coat a positive photoresist with a thickness of 2 μm on the sapphire substrate; use a concentric photolithography plate with an outer diameter of the inner ring of 0.8 μm, an outer diameter of the middle ring of 1.4 μm, and an outer diameter of the outer ring of 2.0 μm. The resist is exposed for 180ms, then developed, and baked at 120° C. for 5 minutes to form a photolithographic pattern on the photoresist. Subsequently, an inductively coupled plasma etching machine (ICP) was used for dry etching. The flow ratio of the first etching parameters BCl3 and Ar was 20, the etching time was 370s, and the power of the lower electrode was 60W. The flow rate ratio of BCl3 and Ar is 100, the etching time is 120s, and the power of the lower electrode is 240W. Finally, the remaining photoresist is removed with a glue remover, and then the sapphire substrate is cleaned with concentrated sulfuric acid and hydrogen peroxide. The obtained corrugated sapphire substrate has a triangular ...

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Abstract

The invention discloses a raised grain type sapphire substrate. The flat surface of the raised grain type sapphire substrate is provided with multiple protruding periodic patterns which are regularly arranged at intervals. Each periodic pattern is composed of at least five triangular cones. The angle range of each triangular cone is 20 degrees to 60 degrees. The height and the bottom width of each periodic pattern is 0.1 micron to 2 microns and 2 microns to 3 microns respectively. According to the raised grain type sapphire substrate, recrystallization GaN will grow on the flat part, the GaN grows upwards, exceeds the top of a raised grain type PSS and begins to grow horizontally on the top of the raised grain type PSS, the GaN which grows on the top of the raised grain type PSS blends and air gaps are formed among the crown-shaped tops of the raised grain. The embedded annular air gaps can enhance scattering of light and obviously improve the extraction efficiency of the light so as to enhance the brightness of an LED. Compared with a semi-spherical PSS in the prior art, the extraction efficiency of light can be improved by 9.8 percentage, thus the price of per unit lumen of a manufactured LED chip is reduced and the raised grain type sapphire substrate has a good application prospect.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a corrugated sapphire substrate and a preparation method. Background technique [0002] PSS (Patterned Sapphire Substrate), that is, to grow a mask for dry etching on a sapphire substrate, use a standard photolithography process to carve the mask into a pattern, use ICP etching technology to etch the sapphire, and remove the mask, GaN material is then grown on it, so that the vertical epitaxy of the GaN material becomes lateral epitaxy. On the one hand, it can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active area, reducing the reverse leakage current, and improving the life of the LED; on the other hand, the light emitted by the active area passes through GaN and sapphire Multiple scattering at the interface of the substrate changes the exit angle of the total reflection ligh...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/007H01L33/22
Inventor 陈起伟施荣华孙智江罗建华张松红
Owner HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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