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Method for preparing CdSe quantum dot sensitization polycrystalline silicon solar cell material

A solar cell and quantum dot sensitization technology, which is applied in photosensitive equipment, circuits, capacitors, etc., can solve the problems of low conversion efficiency, achieve the effect of increasing conversion efficiency and improving the utilization rate of electron conversion

Active Publication Date: 2014-07-02
SHANDONG GOLDENCELL ELECTRONICS TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In other words, the narrower the bandgap, the lower the conversion efficiency

Method used

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  • Method for preparing CdSe quantum dot sensitization polycrystalline silicon solar cell material
  • Method for preparing CdSe quantum dot sensitization polycrystalline silicon solar cell material
  • Method for preparing CdSe quantum dot sensitization polycrystalline silicon solar cell material

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with accompanying drawing and specific embodiment:

[0013] The present invention as figure 1 , 2 As shown, a preparation method of CdSe quantum dot sensitized polycrystalline silicon solar cell material is characterized in that: (1) it is composed of CdSe quantum dot and polycrystalline silicon material, and CdSe quantum dot is mixed in the preparation process of polycrystalline silicon material, and its mass ratio 100:1; (2) The size of doped CdSe quantum dots is 3~5nm; (3) In the preparation method of high-purity silicon, silane is used as the silicon source, and silicon is purified by vapor deposition; 2 The injection tube of the injection tube sprays molten silicon and CdSe quantum dots onto the silicon dioxide substrate at a flow rate of 1.5L / min; (5) in the annealing stage, the cooling rate is 400°C / h; in this embodiment, the first Step one: use silane as raw material, pass through a thermal d...

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Abstract

Disclosed is a method for preparing a CdSe quantum dot sensitization polycrystalline silicon solar cell material. According to the method, the material is composed of CdSe quantum dots and polycrystalline silicon, the CdSe quantum dots are added during preparation of the polycrystalline silicon, and the mass ratio of the polycrystalline silicon to the CdSe quantum dots is 100:1; the sizes of the added CdSe quantum dots are 3 nm - 5 nm; high-purity silicon is prepared with silane as the silicon source, and the vapour deposition method is utilized for silicon purification; molten silicon and CdSe quantum dots are sprayed on a silicon dioxide substrate together by means of a jet nozzle at a flowing speed of 1.5 L / min, and nitrogen is introduced into the jet nozzle; the cooling rate is 400 DEG C / h in the annealing stage.

Description

technical field [0001] The invention relates to a preparation method of a sensitized solar cell material, in particular to a preparation method of a CdSe quantum dot sensitized polycrystalline silicon solar cell material. Background technique [0002] As the environmental and energy problems faced by mankind continue to deteriorate, strengthening environmental protection and developing clean energy are the focus of human attention. Therefore, in recent years, people's research on the development and utilization of solar energy has made rapid progress. As an important photoelectric energy conversion device, the research of solar cells has been paid close attention to by people. Currently, the mainstream solar cells on the market are monocrystalline silicon solar cells and polycrystalline silicon solar cells. [0003] Solar cells use a "band gap" to convert the sun's light energy into electricity. The band gap refers to the energy difference between the "valence band" and "...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
Inventor 关成善宗继月孟博孙启壮
Owner SHANDONG GOLDENCELL ELECTRONICS TECH