Enhanced absorption based method for preparing material-on-insulator

A technology of insulators and insulating layers, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of poor surface uniformity and difficulty in preparing materials on ultra-thin insulators, and achieve smooth peeling surface, high crystal quality, The effect of low roughness

Active Publication Date: 2014-07-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the above method requires large dose and high energy ion implantation. Due to the large ion implantation dose, the surface uniformity after peeling is poor, and chemical mechanical polishing is required to improve the surface uniformity.
And the above method is difficult to prepare ultra-thin materials on insulators

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  • Enhanced absorption based method for preparing material-on-insulator
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  • Enhanced absorption based method for preparing material-on-insulator

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Embodiment Construction

[0032] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] see Figures 2a to 2f . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitra...

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Abstract

The invention provides an enhanced absorption based method for preparing a material-on-insulator. According to the method provided by the invention, first of all, a doped monocrystalline film with a superlattice structure, an intermediate layer, a buffer layer and a top film are successively grown on a first substrate in an epitaxial mode; afterwards, a low-dosage ion implantation is carried out on a structure with the formed top film to enable ions to be implanted on the upper surface or under the lower surface of the doped monocrystalline film with the superlattice structure; and then a second substrate with an insulation layer is bonded with a structure already subjected to the ion implantation, and annealing processing is performed so that micro cracks are generated at the doped monocrystalline film with the superlattice structure so as to realize atom-grade peeling. According to the invention, effective peeling of a bonding pad is realized by use of enhanced adsorption, the peeled surface is smooth, the roughness is low, and the top film crystal quality is high.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, in particular to a method for preparing materials on insulators based on enhanced adsorption. Background technique [0002] Silicon on insulator (SOI) is a structure in which a single crystal silicon film is formed on an insulating substrate or a single crystal silicon film is surrounded by an insulating layer (usually SiO 2 ) Separating the formed structure from the supporting silicon substrate, this kind of material structure can completely isolate the thin film material and substrate material from which the device is made. [0003] Among many SOI preparation technologies, oxygen ion implantation isolation (SIMOX) technology, silicon wafer direct bonding and backside etching (BESOI) technology are the leading technologies. The main advantage of using SIMOX technology is that the silicon layer and the buried layer have good uniformity. This is because the oxygen ion implantatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/76254H01L21/76256
Inventor 张苗陈达狄增峰薛忠营魏星王刚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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