A surface enhanced Raman scattering detection chip and a preparation method thereof

A surface-enhanced Raman and chip technology, which is applied in Raman scattering, material excitation analysis, etc., can solve the problems that the expected effect cannot be fully achieved, and achieve the effect of dense and uniform surface distribution, uniform substrate material, and high-sensitivity detection

Active Publication Date: 2014-08-13
INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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Problems solved by technology

[0004] At present, most of the detection technologies for TNT and other explosives have some shortcomings

Method used

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  • A surface enhanced Raman scattering detection chip and a preparation method thereof
  • A surface enhanced Raman scattering detection chip and a preparation method thereof
  • A surface enhanced Raman scattering detection chip and a preparation method thereof

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Experimental program
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Embodiment

[0044] Embodiment: A preparation method of a surface-enhanced Raman scattering detection chip, the method steps are as follows,

[0045] Step 1: Cut the silicon wafer into 1.5cm×1.5cm strips, ultrasonically clean them one by one with acetone, alcohol, and deionized water and dry them, and place them vertically in an airtight container for later use;

[0046] Step 2: prepare 0.05mol / L of Zn(NO 3 ) 2 solution, in which Zn(NO 3 ) 2 ·6H 2 O (purity is 99.998%) powder is dissolved in deionized water, and equimolar hexamethylenetetramine (HMT) is prepared and mixed with zinc oxide solution, and the mixed solution is poured into a closed container with silicon wafers processed in step 1 In the water bath, react at a constant temperature of 93°C for 3 hours, then take out the silicon wafer, wash it twice with deionized water, put it in an oven and bake it at 70°C for 60 minutes, take out the silicon wafer, and obtain a uniform white ZnO layer on the surface of the silicon wafer. ...

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Abstract

The invention discloses a surface enhanced Raman scattering detection chip and a preparation method thereof. In-situ growth of nanometer flower-like ZnO on a silicon wafer is achieved by utilization of a hydrothermal method. A three-dimensional ZnO-Ag composite material is prepared by utilization of a physical non-solvent magnetron sputtering method. The composite material has high surface enhanced Raman effects. In addition, the composite material is modified with probes so as to construct a chip with the surface enhanced Raman effects. By modification with sulfydryl type probe molecules, explosive molecules with low original Raman activity can be captured on the chip. Through synergetic resonance, the probes and the composite material generate surface enhanced Raman signals, so that the sensitivity of the chip to the explosive molecules is better than that of a simple substrate not modified by probes. In addition, the chip shows good Raman effects for a plurality of explosives and has single high selectivity for the explosive TNT.

Description

technical field [0001] The invention particularly relates to a surface-enhanced Raman scattering detection chip and a preparation method thereof. Background technique [0002] In today's world, terrorism has become a huge threat to mankind, posing a severe test to social development, national stability and human progress. Explosions are the most commonly used means of terrorist attacks with the most serious consequences. In recent years, various bomb attacks in our country have occurred from time to time. Therefore, research on the safety detection technology of explosive dangerous goods has extremely important practical significance. [0003] In addition, the 21 compounds that appeared in the explosive incident all contained nitro compounds such as TNT. The United States Environmental Protection Agency (Environmental Protection Agency, EPA) studies have confirmed that polynitroaromatic substances represented by TNT may have carcinogenic effects. If it is not treated, it...

Claims

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Application Information

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IPC IPC(8): G01N21/65
Inventor 何璇王慧张祺齐天骄罗毅威王蔺
Owner INST OF CHEM MATERIAL CHINA ACADEMY OF ENG PHYSICS
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