Manufacturing method for solar energy battery, and solar energy battery

A technology for solar cells and manufacturing methods, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high manufacturing cost, difficulty in retaining passivation layer process complexity, and many process steps, so as to improve production efficiency and conversion efficiency. Improve and simplify the effect of the process flow

Inactive Publication Date: 2014-08-13
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to overcome the difficulty in retaining the passivation layer in the sintering process of the electrode in the prior art or the existing process of retaining a large-area passivation layer is relatively complex and requires the use of expensive special equipment, manufacturing The defects of high cost and many process steps provide a method for manufacturing a solar cell and a solar cell, which simplifies the process steps and can retain a large area of ​​passivation layer without using expensive special equipment, thereby reducing the cost of the solar cell. cost, simpler process to obtain solar cells with higher conversion efficiency

Method used

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  • Manufacturing method for solar energy battery, and solar energy battery
  • Manufacturing method for solar energy battery, and solar energy battery
  • Manufacturing method for solar energy battery, and solar energy battery

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Embodiment Construction

[0030] The present invention is further illustrated below by means of examples, but the present invention is not limited to the scope of the examples. For the experimental methods that do not specify specific conditions in the following examples, select according to conventional methods and conditions, or according to the product instructions.

[0031] refer to Figure 1-4 , the manufacture method of this solar cell, comprises the following steps:

[0032] Step S 1 ,refer to figure 1 , provide a substrate 1, and texture the front surface of the substrate 1, and form a PN structure on the substrate 1 by means of ion implantation. For example, the PN structure is obtained by implanting ions of the second conductivity type on the front surface of the substrate 1 of the first conductivity type to form a doped layer 2 of the second conductivity type.

[0033] Step S 2 ,refer to figure 2 , the PN structure is annealed, and while annealing, oxygen gas is introduced to form an ...

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Abstract

The invention discloses a manufacturing method for a solar energy battery, and a solar energy battery. The method comprises: step S1, forming a PN structure on a substrate by use of an iron implantation mode; step S2, performing annealing processing on the PN structure, letting in oxygen during annealing so as to form oxide films on the front surface and the back surface of the substrate; step S3, arranging a mask layer on the back surface of the PN structure, an area not covered by the mask layer being an electrode area; and step S4, forming an electrode in the area not covered by the mask layer. According to the invention, the conventional two procedures of passivating and perforating are omitted, the process steps are simplified, and since an additional perforating step is unnecessary, the fragmentation rate is greatly reduced. Besides, by using the method, the adding of new process devices is unnecessary, thus the manufacturing cost is decreased.

Description

technical field [0001] The invention relates to a manufacturing method of a solar cell and the solar cell. Background technique [0002] For solar cells, the back surface without passivation will have a large minority carrier recombination speed, and the conversion efficiency of the solar cell will be affected accordingly. So back passivation is a very effective way to make high-efficiency crystalline silicon cells. Generally speaking, it is necessary to retain a large area of ​​passivation layer on the back of the silicon wafer, such as a silicon dioxide film, because it has a passivation effect on the back of the silicon wafer and can improve the conversion efficiency of the cell. However, it is impossible to passivate 100% of the back side, because a part of the area on the back side must be provided with a back electrode to contact with silicon. Therefore, how to ensure the balance between the electrode area and the passivation layer area is also a hot topic in the fie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/068H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 金光耀王懿喆洪俊华
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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