A kind of packaging method of flexible semiconductor thin film electronic device
A technology for electronic devices and packaging methods, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the deterioration of bending resistance of finished flexible devices, the complex structure of thin-film packaging layers, and the impact on device performance.
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Embodiment 1
[0037] An encapsulation method for flexible semiconductor thin film electronic devices includes the process of preparing a water-oxygen barrier layer, wherein the water-oxygen barrier layer is formed by stacking one or more groups of water-oxygen barrier units, preferably two layers.
[0038] Each group of water-oxygen barrier units includes an organic barrier layer and an inorganic barrier layer, the surface of the organic barrier layer has an uneven topography structure, and the inorganic barrier layer is arranged on the upper surface of the organic barrier layer.
[0039] Since the surface of the organic barrier layer has an uneven topographical structure, the water-oxygen barrier unit composed of the inorganic barrier layer and the organic barrier layer can increase the scattering effect of water vapor and oxygen molecules when they diffuse inside the organic film, and at the same time reduce the water and oxygen molecules. Diffusion channels, thereby reducing the permeabil...
Embodiment 2
[0045] A packaging method for a flexible semiconductor thin film electronic device, other features are the same as those in Embodiment 1, except that an organic barrier layer is prepared by using inorganic particles doped in a photoresist as a raw material, and the surface of the organic barrier layer has some inorganic particles on its surface. A bulge that is inflated by particles.
[0046] Wherein, the particle size of the inorganic particles doped in the photoresist is 0.01-10um, and the doping amount of the inorganic particles is 0.01g / mL-5g / mL. Preferably, the particle size of the inorganic particles doped in the photoresist is 2-5 μm, and the amount of the inorganic particles incorporated is 0.2 g / mL.
[0047]The present invention forms bumps on the surface of the organic barrier layer by doping inorganic particles to form an uneven topography structure on the surface of the organic barrier layer, and prepares the inorganic barrier layer on the surface of the organic ba...
Embodiment 3
[0049] A packaging method for a flexible semiconductor thin film electronic device, other features are the same as those in Embodiment 1 or 2, the difference is that a base layer preparation process is also provided, that is, a base layer is prepared on the surface of the flexible semiconductor thin film electronic device to be packaged, and then the base layer is prepared. A water and oxygen barrier layer is prepared on the base layer.
[0050] The material of the base layer can be Al 2 O 3 or Si 3 N 4 or SiO 2 and other inorganic materials, the thickness is usually 20~200nm. The base layer and the device to be encapsulated have good adhesion performance, so that the water-oxygen barrier layer can be stably prepared on the base layer.
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