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A flip-chip light-emitting diode structure and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as chip short circuits, achieve the effects of avoiding short circuits, protecting side walls, and improving reliability and yield

Active Publication Date: 2016-09-28
HUBEI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, adopt a special barrier gate structure in the chip design and manufacturing process, provide a flip-chip light-emitting diode chip with improved reliability and its manufacturing method, and fundamentally solve the problem. The overflow of solder paste or other conductive materials on the die leads to short circuit problems inside the chip

Method used

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  • A flip-chip light-emitting diode structure and manufacturing method thereof
  • A flip-chip light-emitting diode structure and manufacturing method thereof
  • A flip-chip light-emitting diode structure and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0042] like image 3 and 4 The gallium nitride-based flip-chip light-emitting diode shown includes: a growth substrate 100, an N-type layer 101, a light-emitting layer 102, a P-type layer 103, a metal electrode 104, an insulating layer 105, a V-shaped opening structure 106, and an epitaxial body layer A with barrier structure B.

[0043]Specifically, the growth substrate 100 in the above GaN-based flip-chip light-emitting diode structure is a sapphire substrate; the epitaxial layer is formed on the light-emitting layer 102, wherein the epitaxial layer includes an N-type layer 101, a light-emitting layer 102, and a P-type layer 103 in sequence. The V-shaped opening structure 106 is located above the edge of the epitaxial layer and extends to the surface of the growth substrate 100, so that part of the sidewall of the epitaxial layer and part of the substrate surface are exposed, thereby dividing the epitaxial layer into epitaxial body layer A and The barrier structure B, beca...

Embodiment 2

[0045] like Figure 5~9 The schematic cross-sectional schematic diagram of the manufacturing process of the flip-chip light-emitting diode structure shown, specifically:

[0046] like Figure 5 As shown, a growth substrate 100 is provided first. In this embodiment, the growth substrate 100 is selected from sapphire to form an epitaxial substrate of a GaN-based flip-chip light-emitting diode; however, it should be recognized that the growth substrate 100 can also be Silicon carbide or gallium nitride or silicon or other substrates;

[0047] like Figure 6 As shown, an epitaxial layer is grown on a growth substrate 100, and the epitaxial layer includes an N-GaN layer 101, a light-emitting layer 102, and a P-GaN layer 103 in sequence. Furthermore, a GaN buffer layer can be grown on the growth substrate first, and then grown Epitaxial layer for better lattice quality;

[0048] like Figure 7 As shown, the chip size is defined by the ICP etching process, and the V-shaped openi...

Embodiment 3

[0052] like Figure 10 As shown, the difference from Embodiment 1 is that in this embodiment, a reflective layer 108 is formed before the V-shaped opening structure 106 is formed on the epitaxial layer. The reflective layer 108 can be a reflective metal layer or a distributed Bragg reflective layer or a full As for the azimuth reflective layer, the reflective layer 108 in this embodiment is preferably a reflective metal layer, and the reflective metal layer may include Ni, Pt, Ag, Al, or Rh.

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Abstract

The invention relates to a flip-chip light-emitting diode and a manufacturing method thereof, comprising: a substrate; an epitaxial layer located on the substrate, and the epitaxial layer includes: a first semiconductor layer, a second semiconductor layer, and a first semiconductor layer The light-emitting layer between the semiconductor layer and the second semiconductor layer; at least one opening structure, located above the edge of the epitaxial layer, and extending to the surface of the substrate, so that part of the sidewall of the epitaxial layer and part of the substrate surface are exposed, so that the The epitaxial layer is divided into an epitaxial body layer and a barrier gate structure; an insulating layer is located on the opening structure and serves as a metal electrode isolation layer.

Description

technical field [0001] The invention relates to a flip-chip light-emitting diode structure, in particular to a flip-chip light-emitting diode structure and a manufacturing method thereof. Background technique [0002] Light-emitting diodes (LED in English, abbreviated as Light Emitting Diode) are used in various fields due to their long life and low energy consumption. Used in optical display devices, traffic signs, data storage devices, communication devices and lighting devices, etc. Among them, the III-V compound semiconductors represented by gallium nitride (GaN) have the characteristics of wide band gap, high luminous efficiency, high electron saturation drift speed, and stable chemical properties. The field of optoelectronic devices has great application potential and has attracted widespread attention. [0003] However, the current semiconductor light-emitting diodes have the problem of low luminous efficiency. For ordinary unpackaged light-emitting diodes, a large...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/24H01L33/00
CPCH01L33/0075H01L33/20H01L33/24H01L33/405H01L33/46H01L2933/0025H01L33/38H01L33/44H01L2933/0016
Inventor 何安和林素慧郑建森彭康伟林潇雄徐宸科
Owner HUBEI SANAN OPTOELECTRONICS CO LTD
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