Junction barrier schottky diode and manufacturing method thereof
A junction barrier Schottky and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of JBS device forward performance impact, etc., to increase the effective current conduction area and reduce the chip area, the effect of improving performance
Active Publication Date: 2014-08-27
ZHUZHOU CRRC TIMES SEMICON CO LTD
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However, this distribution does not take full advantage of the fact that the depletion layer (in the reverse blocking mode) extends in the three-dimensional direction, (both of which are mainly extended in the two-dimensional direction of the plane), and the forward direction of the JBS device performance impact
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[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0026] It should be noted that the researchers of the present invention found that under the premise that the area of the active region remains constant, the smaller the area of the P-type doped region, the larger the current conduction area and the greater the current density. Therefore, the area of the P-type doped region in the JBS diode will affect the forward performance of the JBS device.
[0027] Therefore, the present invention improves the P-type doping distribution in the active region of the JBS device by improving the shape and distribution of the P-type doping region. as follows Figure 9 As shown in (c), through improvement, the three-dimensional characteristics of the extension of the space charge region (mainly the extension in the two-dimen...
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The invention discloses a junction barrier schottky diode and a manufacturing method of the junction barrier schottky diode. The junction barrier schottky diode comprises an active area formed by an N-type semiconductor, and a P-type doped area of a break point annular structure is arranged in the active area. According to the junction barrier schottky diode and the manufacturing method of the junction barrier schottky diode, the P-type doped area of the break point annular structure is adopted, and the current effective conduction area of a device can be increased on the premise of making full use of the extending capacity of a depletion layer (in a reverse blocking mode) in the three-dimensional direction. Under the condition of the same area of the active area, the novel structure and distribution can improve the performance of the device, and under the same current level, the area of a chip of the novel structure device is smaller, so that the area of the chip is effectively reduced, and the cost of the chip is reduced.
Description
technical field [0001] The invention relates to a semiconductor device and the field of semiconductor manufacturing, in particular to a junction barrier Schottky (JBS) diode and a manufacturing method thereof. Background technique [0002] With the development of power electronics and smart grid industries, the requirements for performance indicators of high-power semiconductor devices are getting higher and higher. [0003] Junction Barrier Schottky diode (Junction Barrier SBD, JBS) is a kind of reverse biased PN junction space charge region for the Schottky barrier to withstand a higher reverse bias, and to avoid the reduction of the Schottky barrier In order to maintain a low forward voltage drop composite structure device. JBS diode combines the advantages of PiN diode and Schottky barrier SBD, and has the characteristics of small turn-on voltage, low reverse leakage current, high breakdown voltage and high switching speed, so it has a wide range of applications in the ...
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IPC IPC(8): H01L29/872H01L21/329H01L29/06
CPCH01L29/36H01L29/66143H01L29/872
Inventor 李诚瞻刘可安吴煜东吴佳史晶晶杨勇雄
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD