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Free falling high-temperature synthesizing method and synthesizing device for IIB-VIA compound powder

A synthesis device and compound technology, applied in the field of IIB-VIA compound powder synthesis, can solve the problems of easy explosion accident, unsafe reaction process, difficult to release quickly, etc., and achieve easy industrial production, convenient operation, easy processing and production Effect

Active Publication Date: 2014-09-03
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that the heat of reaction in the synthesis process is very large and difficult to release quickly, so the reaction process is unsafe and prone to explosion accidents
Although this method is safe, the preparation cycle is long, and impurities are easily introduced in the process of regrinding, mixing and annealing the generated cadmium telluride material

Method used

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  • Free falling high-temperature synthesizing method and synthesizing device for IIB-VIA compound powder
  • Free falling high-temperature synthesizing method and synthesizing device for IIB-VIA compound powder
  • Free falling high-temperature synthesizing method and synthesizing device for IIB-VIA compound powder

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In this embodiment, the powder material synthesis device such as figure 1 As shown, it includes a furnace body 3, a charging chamber 1, a first valve 2, a second valve 9, a condensation chamber 6 and a collection chamber 10; the furnace body 3 is composed of a heat insulation section 3-1 and a heating section 3-2 , the outer layer of the heat insulation section 3-1 is made of ceramic fiber blanket, and the inner layer is made of 3N quartz, on which an air inlet 13 for connecting with a protective gas source and a first gas outlet for connecting with a vacuum pump are arranged 14. The outer layer of the heating section is made of ceramic fiber blanket, the inner layer is made of 3N quartz, and the length L is 200cm. The heating section is equipped with a heating device 4 and a temperature control thermocouple 5, and the heating device is a resistance heating device; The condensing chamber 6 is made of 3N quartz, the chamber body wall is a sandwich structure, the chamber ...

Embodiment 2

[0034] In this embodiment, the powder material synthesis device such as figure 1 As shown, it includes a furnace body 3 , a charging chamber 1 , a first valve 2 , a second valve 9 , a condensation chamber 6 and a collection chamber 10 . The differences from Example 1 are: 1. The length L of the heating section 3-2 is 100 cm; 2. The heating device 4 installed in the heating section is an induction heating device.

Embodiment 3

[0036] In this embodiment, the powder material synthesis device such as figure 2 As shown, it includes a furnace body 3 , a charging chamber 1 , a first valve 2 , a second valve 9 , a condensation chamber 6 and a collection chamber 10 . The differences from Example 1 are: 1. The length L of the heating section 3-2 is 40 cm; 2. The heating device 4 installed in the heating section 3-2 is a microwave generator, which is connected to the heating section through a waveguide 17.

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Abstract

The invention provides a synthesizing device for powder materials. The synthesizing device comprises a furnace body, a charging chamber, a first valve, a second valve, a condensation chamber and a collection chamber, wherein the furnace body is vertically mounted; a heat insulation section is arranged at the upper part, a heating section is arranged at the lower part and the heat insulation section and the heating section are supported by a bracket; the charging chamber is connected with the top of the heat insulation section of the furnace body through the first valve; the first valve is used for controlling the charging chamber to be communicated with or isolated from the inner cavity of the furnace body; the condensation chamber is connected with the bottom of the heating section of the furnace body; the inner cavity of the condensation chamber is communicated with the inner cavity of the furnace body; the collection chamber is connected with the condensation chamber through the second valve; the second valve is used for controlling the condensation chamber to be communicated with or isolated from the collection chamber. With the adoption of the synthesizing device for the powder materials, VIA non-metal powder in the charging chamber is mixed with IIB metal powder to form raw material powder and the raw material powder continuously enters the inner cavity of the furnace body in a free falling manner; a synthesizing reaction is finished after the raw material powder passes through the heating section of the furnace body and the raw material powder directly falls into the inner cavity of the condensation chamber to be condensed into IIB-VIA compound powder.

Description

technical field [0001] The invention belongs to the technical field of IIB-VIA group compound powder synthesis, and relates to a synthesis method and a synthesis device of IIB-VIA group compound powder. Background technique [0002] Polycrystalline IIB-VIA compound alloy powder is the key core material for preparing solar thin film batteries. With the rapid development of the photovoltaic industry, the demand for IIB-VIA group compound powder raw materials is increasing rapidly at home and abroad. Obtaining high-purity, small-particle-size semiconductor high-purity IIB-VIA group compound powder raw materials through controlled and reasonable preparation process, and continuous batch production is the key goal of industrial production of semiconductor materials today. [0003] The patent with the application number CN201210401061.X discloses a high-temperature liquid-phase synthesis method of cadmium telluride powder. In this method, cadmium blocks and tellurium blocks are r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J8/12B01J19/14C01B19/04C01B17/20
Inventor 叶金文刘颖李小磊
Owner SICHUAN UNIV
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