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Thin film transistor and pixel structure

A thin film transistor, oxide semiconductor technology, applied in transistors, electric solid state devices, semiconductor devices, etc., can solve problems such as leakage current

Active Publication Date: 2014-09-03
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since thin film transistors with a negative initial voltage will cause leakage current problems, how to develop a thin film transistor with a positive initial voltage (ie Vt>0) is one of the goals that researchers want to achieve.

Method used

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  • Thin film transistor and pixel structure
  • Thin film transistor and pixel structure
  • Thin film transistor and pixel structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Figure 1A is a schematic top view of the pixel structure according to the first embodiment of the present invention, Figure 1B for Figure 1A The enlarged schematic diagram of the thin film transistor, while figure 2 for Figure 1A The cross-sectional schematic diagram of the pixel structure along the line I-I'. Please also refer to Figure 1A , Figure 1B and figure 2 , the pixel structure 200A includes a scan line SL, a data line DL, a thin film transistor 100 and a pixel electrode 150 .

[0043] The extending directions of the scanning lines SL and the data lines DL are different, preferably, the extending directions of the scanning lines SL are perpendicular to the extending directions of the data lines DL. In addition, the scan lines SL and the data lines DL are located in different film layers, and an insulating layer (not shown) is sandwiched between them. The scan line SL and the data line DL are mainly used to transmit the driving signal for driving the...

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PUM

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Abstract

The invention discloses a thin film transistor and a pixel structure. The thin film transistor is configured on a substrate. The thin film transistor comprises a grid electrode, an insualting layer, a metal-oxide semiconductor layer, an etching barrier layer, a source electrode, a drain electrode, an organic insulating layer, and a metal-oxide blocking layer. The insualting layer covers the grid electrode. The metal-oxide semiconductor layer is on the insualting layer above the grid electrode. The etching barrier layer covers the metal-oxide semiconductor layer, and the etching barrier layer is provided with a first contact window and a second contact window. The source electrode and the drain electrode are respectively disposed on the etching barrier layer in an opposite manner. The source electrode and the drain electrode are electrically connected with the metal-oxide semiconductor layer respectively through the first contact window and the second contact window. The organic insulating layer covers the etching barrier layer, the source electrode, and the drain electrode. The metal-oxide blocking layer covers the organic insulating layer.

Description

technical field [0001] The invention relates to a semiconductor element, and in particular to a thin film transistor and a pixel structure. Background technique [0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras, and personal digital assistants (Personal Digital Assistant, PDA), etc. . Among these displays, Liquid Crystal Display (LCD) and Organic Electro-luminescent Display (OELD or OLED) have the advantages of thinness and low power consumption, so they have become mainstream commodities in the market. . The manufacturing process of the LCD and the OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include a thin film transistor (Thin Film Transistor, TFT) and a pixel structure. [0003] Generally speaking, the threshold voltage (threshold vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/768H01L29/06H01L27/12
CPCH01L23/291H01L27/1214H01L29/0684H01L29/786
Inventor 陈信学陈培铭
Owner AU OPTRONICS CORP