Thin film transistor and pixel structure
A thin-film transistor and pixel structure technology, applied in transistors, semiconductor devices, electrical solid-state devices, etc., can solve problems such as leakage current
Active Publication Date: 2017-11-21
AU OPTRONICS CORP
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- Application Information
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Problems solved by technology
Since thin film transistors with a negative initial voltage will cause leakage current problems, how to develop a thin film transistor with a positive initial voltage (ie Vt>0) is one of the goals that researchers want to achieve.
Method used
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Embodiment Construction
[0042] Figure 1A is a schematic top view of the pixel structure according to the first embodiment of the present invention, Figure 1B for Figure 1A The enlarged schematic diagram of the thin film transistor, while figure 2 for Figure 1A The cross-sectional schematic diagram of the pixel structure along the line I-I'. Please also refer to Figure 1A , Figure 1B and figure 2 , the pixel structure 200A includes a scan line SL, a data line DL, a thin film transistor 100 and a pixel electrode 150 .
[0043] The extending directions of the scanning lines SL and the data lines DL are different, preferably, the extending directions of the scanning lines SL are perpendicular to the extending directions of the data lines DL. In addition, the scan lines SL and the data lines DL are located in different film layers, and an insulating layer (not shown) is sandwiched between them. The scan line SL and the data line DL are mainly used to transmit the driving signal for driving the...
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The invention discloses a thin film transistor and a pixel structure. The thin film transistor is arranged on the substrate. The thin film transistor includes a gate electrode, an insulating layer, a metal oxide semiconductor layer, an etching barrier layer, a source electrode, a drain electrode, an organic insulating layer and a metal oxide barrier layer. An insulating layer covers the gate. The metal oxide semiconductor layer is located on the insulating layer above the gate electrode. The etching barrier layer covers the metal oxide semiconductor layer, and the etching barrier layer has a first contact window and a second contact window. The source electrode and the drain electrode are respectively disposed oppositely on the etching barrier layer. The source electrode and the drain electrode are electrically connected to the metal oxide semiconductor layer through the first contact window and the second contact window respectively. The organic insulating layer covers the etching barrier layer, source electrode and drain electrode. The metal oxide barrier layer covers the organic insulating layer.
Description
technical field [0001] The invention relates to a semiconductor element, and in particular to a thin film transistor and a pixel structure. Background technique [0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras, and Personal Digital Assistants (PDAs). Among these displays, Liquid Crystal Display (LCD) and Organic Electro-luminescent Display (OELD or OLED) have the advantages of thinness and low power consumption, so they have become mainstream commodities in the market. . The manufacturing process of the LCD and the OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include a thin film transistor (Thin Film Transistor, TFT) and a pixel structure. [0003] Generally speaking, the threshold voltage (threshold voltage, Vt) of a thin film transisto...
Claims
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IPC IPC(8): H01L29/768H01L29/06H01L27/12
CPCH01L23/291H01L27/1214H01L29/0684H01L29/786
Inventor 陈信学陈培铭
Owner AU OPTRONICS CORP