Silicon member for semiconductor apparatus and method of producing same

Abstract

A silicon member for a semiconductor apparatus and a method of producing the same are provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Description

technical field [0001] The present invention relates to a silicon component for a semiconductor device and a method for manufacturing the silicon component for a semiconductor device. More specifically, it relates to a silicon member for dry etching. Background technique [0002] For example, plasma etching equipment used in the process of manufacturing silicon semiconductor devices uses CF to partially remove oxide films. 6 or SF 6 and other fluorinated gases. These fluorinated gases are passed through a plate (electrode plate) that applies a high-frequency voltage to the silicon wafer that is the object of etching and has a plurality of holes drilled, and the silicon oxide film on the surface of the silicon wafer is treated with the plasmaized gas. Etching is performed (refer to the following Patent Document 1). Single-crystal silicon is generally used as these electrode plates (see Patent Document 2 below). In order to ensure the uniformity of etching, it is generally...

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Problems solved by technology

However, columnar silicon is usually polysilicon, and when polysilicon is used for the electrode plate, there are impurities and SiO that tend to form particles on the silicon wafer and segregate to the grain boundaries of the electrode plate. 2 Such as sedimentation on silicon wafers, due to the difference in etching speed caused by different crystallographic orientations, there will be problems such as height differences at grain boundaries

Therefore, it may be difficult to reduce particles, reduce equipment failure due to impurities, or ensure uniformity of etching of silicon wafers due to unevenness of the electric field.

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