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Sapphire crystal growing furnace side screen and preparation method thereof

A sapphire crystal and growth furnace technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of growth equipment loss, rarely mentioned, etc., achieve good stability, reduce production costs, and reduce power consumption amount of effect

Inactive Publication Date: 2014-10-01
南京理工宇龙新材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantage is: in order to obtain high-quality sapphire single crystal, it is necessary to increase the ambient temperature of the outer wall of the crucible in the furnace cavity (that is, the temperature in the furnace cavity), and the temperature is affected by the shape of the heating element and the voltage and voltage applied to the heater. Influenced by current and other factors, increasing the temperature will inevitably cause serious loss of growth equipment
But at present, there is little mention about the design of the side screen of the sapphire crystal growth furnace

Method used

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  • Sapphire crystal growing furnace side screen and preparation method thereof
  • Sapphire crystal growing furnace side screen and preparation method thereof
  • Sapphire crystal growing furnace side screen and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] According to the design requirements of the side screen of the sapphire crystal growth furnace, in a specific mold, a zirconia fiberboard wet blank with a certain shape is produced by vacuum forming, and after drying and sintering, a zirconia fiberboard blank is obtained, which is processed by surface polishing, cutting, etc. A zirconia fiberboard with specific shape and physical and chemical properties is obtained.

[0034] Prepared as figure 1 The shown zirconia fiberboard consists of the following components in mass percentage:

[0035]

[0036] Such as figure 2 As shown, the size of the zirconia fiberboard of the inner screen 1 designed according to the first scheme is 30mm in thickness, 100mm in height, 30mm in inner diameter, 60mm in outer diameter, 5πmm in inner arc length, 11πmm in outer diameter, and the zirconia fiberboard of the outer screen 2 The size is 40mm in thickness, 113mm in height, 30mm in inner diameter, 60mm in outer diameter, 5πmm in inner arc...

Embodiment 2

[0039] According to the published patented fiberboard production method, according to the design requirements of the side screen of the sapphire crystal growth furnace, vacuum forming is used to produce a zirconia fiberboard wet blank with a certain shape in a mold with a specific shape and size, and it is dried at 90-100 °C After sintering at a high temperature above 1600°C, the zirconia fiberboard blank is obtained, and the zirconia fiberboard with specific shape and physical and chemical properties is obtained through surface polishing, cutting and other machining.

[0040] The prepared zirconia fiberboard consists of the following components by mass percentage:

[0041]

[0042] Such as image 3 As shown, the size of the zirconia fiberboard of the inner screen 1 designed according to the second scheme is 30mm in thickness, 100mm in height, 30mm in inner diameter, 60mm in outer diameter, 5πmm in inner arc length, and 11πmm in outer diameter. The dimensions of the zircon...

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Abstract

The invention discloses a sapphire crystal growing furnace side screen. The drum-shaped growing furnace side screen comprises an inner screen and an outer screen connected with the inner screen, wherein the inner screen and the outer screen are both assembled by a plurality of zirconia fiberboards. The invention further discloses a preparation method for the sapphire crystal growing furnace side screen. The growing furnace side screen reduces electrical consumption, lowers the peak power of long crystal, saves energy by above 40%, and is favorable in stability; the zirconia fiberboards are free of volatilization in a high-temperature state, favorable in vacuum degree and stability of the temperature gradient of the thermal field, and assembled by the same arc-shaped zirconia fiberboards in a staggered joint manner; the zirconia fiberboards can be independently replaced when damaged, the entire heat-insulating side screen is not needed to be replaced, and the manufacturing cost of sapphire crystal is effectively lowered.

Description

technical field [0001] The invention belongs to the field of thermal insulation side screens of crystal growth furnaces, and in particular relates to a side screen of a sapphire crystal growth furnace and a preparation method thereof. Background technique [0002] Sapphire single crystal is a simple coordination oxide crystal, which is anisotropic and belongs to the hexagonal crystal system. The lattice parameters a=b=0.4758nm, c=1.2991nm, α=β=90°, γ=120° . The light transmission range of sapphire single crystal is 0.14~6.0μm, covering the vacuum ultraviolet, visible, near-infrared and mid-infrared bands, and has a high optical transmittance in the 3~5μm band; it has high hardness (second only to diamond) , mechanical and thermal properties of high strength, high thermal conductivity, and high thermal shock resistance quality factor; it can maintain high strength, wear resistance and high stability in different environments ranging from ultra-low temperature to high tempera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B35/00C04B35/66
Inventor 刘和义黄振进乔健朱玉龙崔宏亮
Owner 南京理工宇龙新材料科技股份有限公司
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