Sample fixing member for time-of-flight secondary ion mass spectrometer

A secondary ion mass spectrometer and analysis device technology, applied in the field of sample fixing parts, can solve the problems of inaccurate detection, hindering the generation of secondary ions, etc., and achieve the effect of preventing pollution

Inactive Publication Date: 2014-10-01
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the time-of-flight secondary ion mass spectrometer, due to the detection of very small components at the ppm level on the surface of the solid sample, there is a small amount of contamination on the surface of the solid sample that will hinder the generation of secondary ions and cannot be accurately detected. question

Method used

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  • Sample fixing member for time-of-flight secondary ion mass spectrometer
  • Sample fixing member for time-of-flight secondary ion mass spectrometer
  • Sample fixing member for time-of-flight secondary ion mass spectrometer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] Form an Al thin film (thickness 10nm) on a silicon substrate (manufactured by KST, wafer with a thermally oxidized film, thickness 1000μm) using a vacuum evaporation device (manufactured by JEOL, JEE-4X Vacuum Evaporator), and then perform oxidation at 450°C for 1 hour deal with. In this way, Al is formed on the silicon substrate 2 o 3 membrane. in the Al 2 o 3 On the film, an Fe thin film (2 nm in thickness) was further vapor-deposited by a sputtering apparatus (manufactured by ULVAC, RFS-200) to form a catalyst layer.

[0101]Next, the obtained silicon substrate with the catalyst layer was cut and placed in a 30mmφ quartz tube, and a mixed gas of helium / hydrogen (120 / 80sccm) with a water content of 350ppm was flowed in the quartz tube for 30 minutes to replace the inside of the tube. Then, the temperature was raised to 765° C. within the tube stepwise over 35 minutes using an electric tube furnace, and then stabilized at 765° C. With the temperature kept at 765°...

Embodiment 2

[0106] An Al thin film (thickness: 10 nm) was formed on a silicon wafer (manufactured by Silicon Technology) as a substrate by a sputtering device (manufactured by ULVAC, RFS-200). Further, an Fe thin film (thickness: 1 nm) was vapor-deposited on this Al thin film using a sputtering device (manufactured by ULVAC, RFS-200).

[0107] Then, the substrate was placed in a 30 mmφ quartz tube, and a mixed gas of helium / hydrogen (90 / 50 sccm) with a water content of 600 ppm was flowed in the quartz tube for 30 minutes to replace the inside of the tube. Then, the temperature inside the tube was raised to 765°C using a tube electric furnace, and then stabilized at 765°C. With the temperature kept at 765°C, the mixed gas of helium / hydrogen / ethylene (85 / 50 / 5 sccm, moisture content 600ppm) was filled in the tube, and left for 10 minutes to allow the carbon nanotubes to grow on the substrate, and the carbon nanotubes were obtained according to Aggregates of carbon nanotubes oriented in the ...

Embodiment 3

[0112] Form an Al thin film (thickness 10nm) on a silicon substrate (manufactured by KST, wafer with a thermally oxidized film, thickness 1000μm) using a vacuum evaporation device (manufactured by JEOL, JEE-4X Vacuum Evaporator), and then perform oxidation at 450°C for 1 hour deal with. In this way, Al is formed on the silicon substrate 2 o 3 membrane. in the Al 2 o 3 Further, an Fe thin film (thickness: 2 nm) was vapor-deposited on the film using a sputtering device (manufactured by ULVAC, RFS-200) to form a catalyst layer.

[0113] Next, the obtained silicon substrate with the catalyst layer was cut and placed in a 30mmφ quartz tube, and a mixed gas of helium / hydrogen (120 / 80sccm) with a water content of 350ppm was flowed in the quartz tube for 30 minutes to replace the inside of the tube. Then, the temperature was raised to 765° C. within the tube stepwise over 35 minutes using an electric tube furnace, and then stabilized at 765° C. With the temperature kept at 765°C...

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Abstract

Provided is a sample fixing member for a time-of-flight secondary ion mass spectrometer, capable of preventing contamination of a solid sample, capable of stably fixing the solid sample, and capable of accurately detecting secondary ions in a time-of-flight secondary ion mass spectrometer. This sample fixing member for a time-of-flight secondary ion mass spectrometer includes a fibrous columnar structure comprising a plurality of fibrous columnar objects having a length of at least 200 [mu]m.

Description

technical field [0001] The present invention relates to a sample fixing member for a time-of-flight secondary ion mass spectrometer. Specifically, it relates to a member for fixing a sample to be measured in a Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS: Time-of-Flight Secondary Ion Mass Spectrometry). Background technique [0002] The time-of-flight secondary ion mass spectrometer (TOF-SIMS) is a device used to investigate what kind of components (atoms, molecules) exist on the surface of a solid sample. It can detect very small components at the ppm level and can be applied to organic and inorganic thing. In addition, according to the time-of-flight secondary ion mass spectrometer (TOF-SIMS), it is also possible to investigate the distribution of components present on the outermost surface of a solid sample (for example, refer to Patent Document 1). [0003] In the time-of-flight secondary ion mass spectrometer, the surface of a solid sample is bombarded wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/64C01B31/02H01J49/40
CPCC01B31/02H01J49/142H01J49/0409H01J49/145C01B31/0226G01N1/00H01J49/02H01J49/40C01B32/16C01B32/05G01N27/64
Inventor 前野洋平
Owner NITTO DENKO CORP
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