Method for improving electrochemical performance through reducing graphene oxide (GO) by using hydrogen (H2) and argon (Ar) mixed plasma

A hybrid plasma and plasma technology, applied in the field of reducing graphene oxide (GO) with hydrogen (H2) and argon (Ar) mixed plasma to improve electrochemical performance, can solve the complex process, time-consuming, introduction of impurities, etc. problem, to achieve the effect of improving the electrochemical performance

Inactive Publication Date: 2014-10-08
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] In order to overcome the deficiencies of the existing preparation methods such as complex process, easy introduction of impurities, time-consuming, etc., the present invention provides a 2 A Method for Reducing GO with Ar Mixed Plasma

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  • Method for improving electrochemical performance through reducing graphene oxide (GO) by using hydrogen (H2) and argon (Ar) mixed plasma
  • Method for improving electrochemical performance through reducing graphene oxide (GO) by using hydrogen (H2) and argon (Ar) mixed plasma
  • Method for improving electrochemical performance through reducing graphene oxide (GO) by using hydrogen (H2) and argon (Ar) mixed plasma

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Embodiment 1

[0027] one with H 2 A method for improving electrochemical performance by reducing GO with Ar plasma, comprising the following steps:

[0028] A. Ultrasonically disperse the 5 mg / mL GO solution uniformly, then spin-coat GO on the ITO conductive glass substrate with a spin-coater, the speed of the spin-coater is 3000 rpm, the spin-coating time is 90 s, and then placed at 60 ° Dry on a heating platform in C for 5 min to obtain a dried GO film;

[0029] B, the ITO conductive glass that is loaded with GO thin film is placed in plasma discharge chamber 1 (see figure 1 ), the discharge chamber is connected with a graphite electrode 2, and the electrode is connected with an AC power supply 3, which can generate an inductively coupled plasma source. Argon gas is first introduced into the discharge chamber to drive away the air, and then the vacuum pump is turned on to evacuate to 2 Pa. At this time Turn on the AC power supply 3 to generate H 2 The mixed plasma flow with Ar is direc...

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Abstract

The invention relates to a method for improving electrochemical performance through reducing graphene oxide (GO) by using a hydrogen (H2) and argon (Ar) mixed plasma. The method comprises the following steps of spin-coating GO on ITO (Indium Tin Oxide) conducting glass, drying, then, placing the ITO conducting glass into a plasma discharge chamber, wherein a graphite electrode is connected to the inside of the discharge chamber, and the electrode is connected with a radio-frequency alternating-current power supply capable of generating an inductive coupling plasma source; before discharging, introducing Ar, expelling air, then, starting a vacuum pump to vacuumize to about 2Pa, and introducing H2 and Ar mixed gas; when the total gas flow of H2 and Ar is 3sccm, and the flow ratio of H2 to Ar is 2 to 1, turning on the alternating-current power supply to generate a H2 and Ar mixed plasma, wherein the power of alternating current is 70w; directly acting the plasma flow on a GO film, and discharging for 5min to obtain a reduced graphene oxide (rGO) film. The method is not only capable of effectively reducing GO, but also is rapid, efficient, green and free of introducing impurities. The prepared rGO film is used as an electrode material, and the specific capacity of the rGO film is 211.8F/g which is higher than the specific capacity of rGO obtained by using other reducing methods.

Description

technical field [0001] The present invention relates to a kind of hydrogen (H 2 ) and argon (Ar) mixed plasma reduction of graphene oxide (GO) to improve electrochemical performance. Background technique [0002] Graphene has unique properties such as high electrical conductivity and large theoretical specific surface area, and is an ideal electrode material for supercapacitors. Graphene oxide (GO) can be mass-produced from cheap graphite powder, but the presence of oxygen functional groups changes the electrical properties of graphene. The preparation of graphene by reducing GO is considered to be the most promising method for mass production of graphene. The existing methods for reducing GO mainly use various strong reducing agents, such as hydrazine hydrate, anhydrous hydrazine, sodium hydrogen borate, etc. This method is time-consuming, has low production efficiency, and complicated process, and hydrazine hydrate and anhydrous hydrazine are toxic and dangerous chemica...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 李洁王奇韦娟陈长伦王祥科
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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