Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reference voltage generating circuit

A reference voltage and generation circuit technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of limiting the performance of the bandgap reference source, high output noise of the bandgap reference, and large current consumption. The effect of small layout area, high PSRR, and low power consumption

Inactive Publication Date: 2014-10-15
NANJING CHIPOWER ELECTRONICS
View PDF5 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional bandgap reference structure includes operational amplifiers, triode BJTs, resistors, and compensation capacitors. It uses many components, has a large layout area, and consumes a large amount of current; and the output noise of the bandgap reference is high and difficult to reduce; if To obtain a higher PSRR, there are higher requirements on the gain and bandwidth of the operational amplifier used, and these factors limit the performance of the bandgap reference source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reference voltage generating circuit
  • Reference voltage generating circuit
  • Reference voltage generating circuit

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0027] like figure 1 The shown reference voltage generation circuit includes: a pre-adjustment circuit that converts an input voltage into a pre-regulated voltage, and a core circuit that generates a reference voltage under the action of the pre-regulated voltage. The pre-adjustment circuit includes: depletion-type NMOS transistor DN11, depletion-type NMOS transistor DN22. The core circuit includes: depletion NMOS transistor DN1, depletion NMOS transistor DN2, enhanced NMOS transistor MN1, and resistor R1. The drains of the depletion-type NMOS transistors DN11 and DN22 are both connected to the input voltage VIN, the substrates of the depletion-type NMOS transistors DN11 and DN22 are both grounded, the source of the depletion-type MOS transistor DN11 and the gate of the depletion-type NMOS transistor DN22 are connected to the The depletion mode NMOS transistor DN1 drain connection ( figure 1 point A in), the source of the depletion-type NMOS transistor DN22, the gate of the ...

specific Embodiment 2

[0033] On the basis of the specific embodiment 1, the voltage division branch is introduced, and the voltage division branch can be figure 1 The resistor R2 shown, the resistor R1 and the resistor R2 are connected in series to form a voltage divider circuit, for V REF1 voltage divider can be obtained below V REF1 value of any reference voltage V REF2 , V REF2 =V REF1 *R2 / (R1+R2). Various implementations can be selected for the voltage-dividing branch according to the requirements of the reference voltage, and each voltage-dividing output point of the voltage-dividing circuit is used as an output point of any reference voltage. This example realizes the output of any value reference voltage.

specific Embodiment 3

[0034] figure 2 with the reference voltage generating circuit shown in 3. V REF The value is a fixed value, and it cannot provide other slightly lower arbitrary value reference voltages, and it is difficult to perform Trimming to increase V REF accuracy. If the resistor trimming function is added to the resistor R1 or R2, the size of resistor R1 and resistor R2 can be increased by laser or aluminum burning REF2 Accuracy, eliminating the V REF1 value deviation.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a reference voltage generating circuit and belongs to the technical field of integrated circuits. The reference voltage generating circuit comprises a presetting circuit converting input voltage to presetting voltage and a core circuit generating reference voltage under the action of the presetting voltage. The presetting circuit comprises a first depletion mode N-channel metal oxide semiconductor transistor and a second depletion mode N-channel metal oxide semiconductor transistor, and the core circuit comprises a third depletion mode N-channel metal oxide semiconductor transistor, a fourth depletion mode N-channel metal oxide semiconductor transistor, an enhanced N-channel metal oxide semiconductor transistor and a first resistor. The circuit is simplified, the layout area is reduced, output of the reference voltage with an arbitrary value is realized, and the reference voltage generating circuit has the advantages of low power consumption, low noise, low temperature coefficient and high PSRR (power supply rejection ratio).

Description

technical field [0001] The invention discloses a reference voltage generation circuit, in particular a reference voltage generation circuit composed of a depletion type MOS tube and an enhanced MOS tube, which belongs to the technical field of integrated circuits. Background technique [0002] As an important unit module circuit in IC design, the reference voltage source is widely used in various analog integrated circuits, digital integrated circuits and digital-analog hybrid integrated circuits. With the development of integrated circuit technology, the requirements for reference voltage sources are getting higher and higher, and the reference voltage sources are required to have low power consumption, low noise, low temperature coefficient, high PSRR, and small layout area. [0003] The traditional reference voltage source generally adopts a bandgap reference structure, using the BE junction voltage drop V of the negative temperature coefficient of the triode BJT BE Supe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 黄九洲
Owner NANJING CHIPOWER ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com