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Active Solid State Light Emitting Display

A solid-state light-emitting and display technology, applied in the direction of electric solid-state devices, instruments, semiconductor devices, etc., can solve the problems of high breakdown voltage and life degradation of organic light-emitting diodes, achieve high breakdown voltage, solve the problem of life degradation, and high resistance to environmental factors Effect

Inactive Publication Date: 2016-12-28
DONGTOU HENGTONG ELECTRICAL MFG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Compared with the prior art, the active solid-state light-emitting display of the present invention avoids the problem of degradation in the manufacturing process through the material characteristics of the light-emitting diode of the solid-state light source. For example, the nitride semiconductor light-emitting diode in the III-V semiconductor has a long life , high resistance to environmental factors, high breakdown voltage and wide energy gap characteristics can solve the problem of lifetime degradation caused by organic light-emitting diodes

Method used

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  • Active Solid State Light Emitting Display
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  • Active Solid State Light Emitting Display

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Embodiment Construction

[0013] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0014] see figure 1 Shown is a combined cross-sectional view of the first embodiment of the active solid-state light-emitting display of the present invention. The solid state light emitting display 10 includes a substrate 12 , a plurality of solid state light sources (Solid State Lighting) 14 and a plurality of thin film transistors (Thin Film Transistor) 16 . A buffer layer 122 is disposed on the surface of the substrate 12, and the buffer layer 122 is an insulation buffer layer (Insulation Buffer Layer). The material of the buffer layer 122 is selected from low temperature aluminum indium gallium nitride (Low Temperature AlInGaN, LT-AlGaInN), silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), hafnium oxide (HfOx), At least one of aluminum oxide (AlOx), tantalum oxide (TaOx) or barium strontium titanate (BaSrTiOx) or a combination thereof. ...

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Abstract

The present invention provides an active solid-state light-emitting display, which includes a substrate, a plurality of solid-state light-emitting sources and a plurality of thin-film transistors, a buffer layer is provided on the surface of the substrate, and the solid-state light-emitting source and the A thin-film transistor, the thin-film transistor is located on one side of the solid-state light-emitting source, the solid-state light-emitting source is a light-emitting diode, and the thin-film transistor is electrically connected to the light-emitting diode of the solid-state light-emitting source through a source electrode or a drain electrode. sexual connection. The active light-emitting diode formed by the solid-state light-emitting source combined with the thin-film transistor in the present invention can effectively solve the problem of life-span degradation of organic light-emitting diode materials and manufacturing process.

Description

technical field [0001] The invention relates to an active solid-state light-emitting display, in particular to an active solid-state light-emitting display in which an organic light-emitting source is replaced by a solid-state light-emitting source structure. Background technique [0002] The main technology of the new-generation Flat-Panel Display is an Active Matrix Organic Light Emitting Display (AMOLED) made of organic materials. Although the active organic light-emitting diode display has the advantages of high brightness, fast screen response, thin and short, full color, no viewing angle difference, no need for backlight, and power saving. However, the organic light-emitting material is easily affected by the process environment during the process, for example, moisture in the environment will cause degradation of the organic material. Therefore, the active OLED display needs to be fabricated in a vacuum environment, and a sealing process is required to avoid deterior...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15G09F9/33
Inventor 唐奎鹏
Owner DONGTOU HENGTONG ELECTRICAL MFG