Pallet and plasma processing equipment

Abstract

Disclosed are a pallet (10) and a plasma machining apparatus. The pallet (10) is used for bearing a machined work-piece (14), and adjusting the temperature of the machined work-piece (14) by means of a heat exchange gas, wherein at least one bearing region of the machined work-piece is formed on the upper surface of the pallet (10); the shape and size of each bearing region of the machined work-piece are corresponding to the machined work-piece (14) to be borne; at least one recess (11) which is recessed towards the lower surface of the pallet is formed in a non-edge region (111) of each bearing region of the machined work-piece; the maximum diameter of a notch of each recess (11) is smaller than the minimum diameter of the borne surface of the machined work-piece (14) to be borne; intake holes (13) are distributed on the bottom surface of the recess (11); and the intake holes (13) are connected to a gas source of the heat exchange gas. The pallet (10) can not only improve the efficiency and uniformity of heat exchange between the heat exchange gas and the machined work-piece (14), but can also reduce the leakage amount of the heat exchange gas.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a tray and plasma processing equipment. Background technique [0002] Plasma processing equipment is a common equipment for processing semiconductor devices. During the process of etching, sputtering and chemical vapor deposition, etc., in order to improve the production efficiency of plasma processing equipment and reduce production costs, generally larger size The tray is used to carry multiple wafers and transport them to the reaction chamber at the same time, so as to realize the simultaneous processing of multiple wafers. [0003] During actual processing, the plasma formed in the reaction chamber tends to cause the temperature of the wafer to exceed the temperature required by the process, so it is necessary to control the temperature of the wafer. The traditional temperature control method is to blow heat exchange gas, such as helium, on the back side o...

AI Technical Summary

Problems solved by technology

And this can produce following problem: because the backside of wafer and the loading surface of tray closely fit, cause the gap between the backside of wafer and the loading surface of tray to be too small, this makes the heat exchanging gas in this gap mainly concentrate on Near the air inlet hole, it is difficult to diffuse to the edge of the wafer, resulting in poor heat exchange effect between the heat exchange gas and the edge area of ​​the wafer, which will cause a difference between the temperature of the edge area of ​​the wafer and the temperature of the center area, and the processed workpiece poor temperature uniformity

This will also lead to poor heat exchange between the heat exchange gas and the edge area of ​​the wafer, resulting in a difference between the temperature of the edge area of ​​the wafer and the temperature in the center area, and thus the temperature uniformity of the processed workpiece is poor

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