Gradient doped II-type superlattice material and preparation method thereof
A gradient doping and superlattice technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems of performance gap, unsatisfactory dark current and quantum efficiency, etc., and achieve the improvement of quantum Efficiency, the effect of reducing dark current
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example 1
[0069] The growth method of the class II superlattice material provided by the embodiments of the present invention includes the following processes:
[0070] 1. Put the epitaxial GaSb substrate into the buffer room of the molecular beam epitaxy equipment for pretreatment, and the buffer room is pretreated at 300 ° C for 30 minutes;
[0071] 2. Put the pretreated GaSb substrate into the growth chamber of the molecular beam epitaxy equipment to raise the temperature to complete the thermal desorption oxide layer process before epitaxy. When the substrate temperature is higher than 350°C, turn on the Sb beam (beam size 1×10 -6 Torr) protection, the deoxidation temperature is 530°C, and the time is 15 minutes;
[0072] 3. Cool down the GaSb after removing the oxide layer to 500°C to grow the GaSb buffer layer, the growth rate is 0.4ML / s, and the growth thickness is 0.45μm;
[0073] 4. Cool down the substrate after growing the buffer layer to the superlattice growth temperature o...
example 2
[0080] The growth method of the class II superlattice material provided by the embodiments of the present invention includes the following processes:
[0081] 1. Put the epitaxial GaSb substrate into the buffer room of the molecular beam epitaxy equipment for pretreatment, and the buffer room is pretreated at 300 ° C for 60 minutes;
[0082] 2. Put the pretreated GaSb substrate into the growth chamber of the molecular beam epitaxy equipment to raise the temperature to complete the thermal desorption oxide layer process before epitaxy. When the substrate temperature is higher than 350°C, turn on the Sb beam (beam size 1×10 -6 Torr) protection, the deoxidation temperature is 580°C, and the time is 30 minutes;
[0083] 3. Cool down the GaSb after removing the oxide layer to 500°C to grow the GaSb buffer layer, the growth rate is 0.5ML / s, and the growth thickness is 0.5μm;
[0084] 4. Lower the temperature of the substrate after the growth of the buffer layer to the superlattice ...
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