Method for forming buffer layers needed by single-crystal gallium nitride growth

A buffer layer, gallium nitride technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as difficulties, growth film breakage, cracking, etc., to achieve the effect of reducing production time and cost

Inactive Publication Date: 2014-11-12
SHANGHAI ZHENGFAN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the above-mentioned methods cannot reduce the potential defect density of the sapphire substrate and the GaN growth layer to 5X105-6 / cm 2 Next, due to artificially adding the stress caused by the use of the photomask process, if the thickness reaches 100 μm or more during growth, warping and cracking will occur, and even the growth film will be broken. Therefore, high-quality GaN with a thickness of 350 μm or more is guaranteed. single crystal substrates are difficult

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  • Method for forming buffer layers needed by single-crystal gallium nitride growth

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Embodiment 1

[0025] A method for forming a buffer layer required for the growth of single crystal gallium nitride, comprising the following steps:

[0026] Step 1): growing a GaN single crystal film on the sapphire substrate according to the HVPE method: including the stage of growing the first buffer layer, the stage of the second buffer layer, and the stage of the third buffer layer;

[0027] Step 2): After the sapphire substrate obtained in step 1) is treated with HCI (treatment temperature is 1100°C), the GaN single crystal film forms a GaN film buffer layer with a nanoporous structure, and the GaN film buffer layer with a nanoporous structure Then grow the first buffer layer, the second buffer layer, and the third buffer layer in sequence, and grow vertical GaN crystals to obtain a GaN single crystal substrate.

[0028] The first buffer layer, the second buffer layer and the third buffer layer are grown with the tendency of V / III ratio gradually decreasing, and the thickness of each l...

Embodiment 2

[0032] A method for forming a buffer layer required for the growth of single crystal gallium nitride, comprising the following steps:

[0033] Step 1): growing a GaN single crystal film on the sapphire substrate according to the HVPE method: including the stage of growing the first buffer layer, the stage of the second buffer layer, and the stage of the third buffer layer;

[0034] Step 2): After the sapphire substrate prepared in step 1) is treated with HCI (treatment temperature is 1000° C.), the GaN single crystal film forms a GaN thin film buffer layer with a nanoporous structure, and the GaN thin film buffer layer with a nanoporous structure Then grow the first buffer layer, the second buffer layer, and the third buffer layer in sequence, and grow vertical GaN crystals to obtain a GaN single crystal substrate.

[0035] The first buffer layer, the second buffer layer and the third buffer layer are grown in the tendency of V / III ratio gradually decreasing, and the thickness...

Embodiment 3

[0037] A method for forming a buffer layer required for the growth of single crystal gallium nitride, comprising the following steps:

[0038] Step 1): growing a GaN single crystal film on the sapphire substrate according to the HVPE method: including the stage of growing the first buffer layer, the stage of the second buffer layer, and the stage of the third buffer layer;

[0039]Step 2): After the sapphire substrate obtained in step 1) is treated with HCI (treatment temperature is 800°C), the GaN single crystal film forms a GaN film buffer layer with a nanoporous structure, and the GaN film buffer layer with a nanoporous structure Then grow the first buffer layer, the second buffer layer, and the third buffer layer in sequence, and grow vertical GaN crystals to obtain a GaN single crystal substrate.

[0040] The first buffer layer, the second buffer layer and the third buffer layer are grown with the V / III ratio gradually decreasing, and the thickness of each layer is 1 μm, ...

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Abstract

The invention discloses a method for forming buffer layers needed by single-crystal gallium nitride growth. The method includes the steps that a GaN single-crystal membrane is grown on a sapphire substrate with the HVPE method, wherein the step comprises a stage for growing the first buffer layer, a stage for growing the second buffer layer and a stage for growing the third buffer layer; after HCI processing is carried out on the sapphire substrate, the GaN single-crystal membrane forms the GaN thin membrane buffer layer of a nanometer porous type structure, the first buffer layer, the second buffer layer and the third buffer layer are sequentially grown on the GaN thin membrane buffer layer of the nanometer porous type structure, vertical type GaN crystals are grown, and a GaN single-crystal substrate is obtained. The nanometer porous type structure and the GaN growing process are easily formed through the In-situ process in an HVPE device, so that time and cost for manufacturing the GaN single-crystal substrate can be reduced; the thickness of the nanometer porous type buffer layer can be 300 micrometers.

Description

technical field [0001] The present invention relates to a method for forming a buffer layer for GaN single crystal growth, in particular to a buffer layer with a nano porous structure and a vertical film structure formed on the interface between a sapphire substrate and GaN to improve single crystal A buffer layer formation method for GaN potential defect density. Background technique [0002] Recently, due to rapid development of information communication technology, communication technology for large-capacity signal transmission is also rapidly developing. With the increasing demand for personal mobile phones, satellite communications, military radio positioning, broadcast communications, and repeaters for communications in wireless communication technology, high-speed, high-power devices for ultra-high-speed information communication systems of micro-wave and millimeter-wave are required There is also an increasing trend in the requirements of electronic devices. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/20
CPCH01L21/0242H01L21/02458H01L21/02505H01L21/0251H01L21/02513H01L21/0254
Inventor 金施耐许桢金东植
Owner SHANGHAI ZHENGFAN TECH
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