Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a method for manufacturing a semiconductor device, comprising: providing a substrate, an epitaxial layer is formed on one side of the substrate, and at least one source is formed on the surface of the epitaxial layer away from the substrate region, a source electrode is formed on the side of the source region away from the substrate; at least one first opening is formed on the side of the substrate away from the epitaxial layer, and the first opening exposes the source Pole region: filling the first opening with a conductive material to form a conductive plug. Meanwhile, the invention also provides a semiconductor device. The semiconductor device and the preparation method of the invention avoid multiple high-dose, high-energy ion implantation processes and high-temperature diffusion processes, thereby improving the performance and reliability of the semiconductor device.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] Radio frequency LDMOS (lateral diffusion metal oxide semiconductor) is a device with a very good market. Especially with the widespread application of communication technology, radio frequency LDMOS as a new type of power device will receive more and more attention. [0003] Such as figure 1 As shown, this is a simple schematic diagram of an existing radio frequency LDMOS device. An epitaxial layer 20 is formed on one side of the substrate 10, and at least one source region 21, drain region 22, body region 23, and drift region 24 are formed on the surface of the epitaxial layer 20 facing away from the substrate 10. A source 31, a gate 32 and a drain 33 are formed on the side of the source region 21 away from the substrate 10, and the source 31, the gate 32 and the drain 33 are isolate...

AI Technical Summary

Problems solved by technology

In order to obtain the sinker layer 25 that penetrates the epitaxial layer 20, it is often necessary to diffuse at high temperature for a long time after ion implantation, which causes the sinker layer 25 to have a larger lateral size, resulting in a larger lateral size of the radio frequency LDMOS device, thereby increasing the The device area increases the parasitic effect, which limits the improvement of device performance including power and efficiency; at the same time, since this high-temperature diffusion process is formed after the formation of the epitaxial layer 20, these high-temperature diffusion processes will cause the epitaxial layer to be close to the substrate The impurity redistribution in the region of 10 further affects the performance of the device

For n-type or p-type LDMOS, the types of carriers in the sinker layer 25 are different, and ion implantation and corresponding high-temperature diffusion are required separately, which makes the manufacturing process more complicated.

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