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A near-zero eddy current loss interconnection wire and its preparation method

A technology of eddy current loss and interconnection wires, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc., can solve the problems of low resistivity, increase the cost of final devices, and low cost, and achieve low resistance efficiency, reduce the difficulty and cost of the preparation process, and the effect of low cost

Active Publication Date: 2017-01-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the preparation of high-frequency devices (especially radio-frequency devices), in order to increase the skin depth, metal materials with higher conductivity such as silver are often used as interconnect lines, but because silver is a noble metal, it will greatly increase the thickness of the interconnect lines. final device cost
At present, there is no report of a near-zero eddy current loss interconnection wire with low cost and low resistivity, and even realizes near-zero effective magnetic permeability in a specific frequency band and its preparation method

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  • A near-zero eddy current loss interconnection wire and its preparation method
  • A near-zero eddy current loss interconnection wire and its preparation method
  • A near-zero eddy current loss interconnection wire and its preparation method

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Embodiment Construction

[0027] The technical solutions of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] like figure 1 As shown, a near-zero eddy current loss interconnection line of the present invention includes a substrate substrate 3 and an interconnection line on the surface of the substrate substrate 3, and the interconnection line is composed of a metal copper thin film layer 1 and a ferromagnetic metal A periodic composite superlattice thin film structure formed by interphase stacking of thin film layers 2; wherein, the thickness of each metal copper thin film layer 1 is 50-1000 nm, and the thickness of each ferromagnetic metal thin film layer 2 is 20-500 nm; The magnetic metal is an alloy formed by the magnetic metal and copper; the period number of the periodic composite superlattice thin film structure is 5-200.

[0029] The superlattice thin film structure is a multilayer film in which two different materials grow alternately...

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Abstract

A near-zero eddy current loss interconnection wire and a preparation method thereof belong to the technical field of radio frequency devices. Including the substrate substrate and the interconnection line on the surface of the substrate substrate; the interconnection line is a periodic composite superlattice film structure formed by laminating metal copper film layers and ferromagnetic metal film layers; each layer of metal copper film The thickness of the layer is 50-1000nm, and the thickness of each ferromagnetic metal film layer is 20-500nm; the ferromagnetic metal is an alloy formed of magnetic metal and copper; the period number of the periodic composite superlattice film structure is 5-200. Metal copper is used as the raw material of the interconnection line, the cost is low, the superlattice film structure is adopted, the structure is simple, easy to realize, the stress caused by lattice mismatch is reduced, the resistivity is low, and the frequency band can be selected to achieve near-zero effective permeability. Therefore, the thickness can be 10-100 μm without obvious skin effect; the interconnection line is prepared by multi-cycle alternating electroplating by metal electrochemical alternate deposition method, which reduces the difficulty and cost of the preparation process. The invention is applicable to radio frequency devices.

Description

technical field [0001] The invention relates to the technical field of radio frequency devices, in particular to an ultra-low eddy current loss radio frequency interconnection wire and a preparation method thereof, in particular to a near-zero eddy current loss interconnection wire for radio frequency devices and a preparation method thereof. Background technique [0002] In the field of radio frequency device technology, on-chip integrated devices such as micro-inductors, microstrip lines, coplanar waveguides, etc. all need to use patterned films as interconnect lines, while traditional devices mostly use copper as the preparation material for interconnect lines. However, due to the skin effect, the electromagnetic wave will cause eddy current phenomenon inside the copper conductor, the current distribution on the conductor cross section is no longer uniform, and the current is concentrated in the thin layer adjacent to the outer surface of the wire, which increases the resi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768
Inventor 白飞明王艺程钟志勇张怀武
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA