Organic light emission diode device and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low device life and low luminous efficiency of organic electroluminescent devices, and achieve film-forming quality Good, beneficial to the transmission process and the effect of increasing the number
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0028] A method for preparing an organic electroluminescent device, comprising the following steps:
[0029] (1) A glass substrate is provided, and a conductive anode is deposited on the surface of the glass substrate by electron beam evaporation, and the conductive anode is Ag, among which,
[0030] The pressure when preparing the conductive anode by electron beam evaporation is 1×10 -3 Pa, the energy density of electron beam evaporation is 10W / cm2 , the evaporation rate is 0.01 nm / s, and the thickness of the conductive anode is 20nm.
[0031] (2) Vacuum-deposit the first hole injection auxiliary layer on the surface of the conductive anode. The material of the first hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1,4,5, 8,9,12-hexaazatriphenylene (HAT-CN), the pressure of the first hole injection auxiliary layer evaporation is 1×10 -3 Pa, the evaporation rate is 0.1nm / s, and the evaporation thickness is 1nm.
[0032] (3) The second hole injection auxiliary ...
Embodiment 2
[0043] A method for preparing an organic electroluminescent device, comprising the following steps:
[0044] (1) A glass substrate is provided, and a conductive anode is deposited on the surface of the substrate through vacuum thermal resistance evaporation, and the conductive anode is selected from Al. Among them,
[0045] The pressure of conductive anode evaporation is 1×10 -5 Pa, the evaporation rate is 5nm / s.
[0046] (2) Vacuum-deposit the first hole injection auxiliary layer on the surface of the conductive anode. The material of the first hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1,4,5, 8,9,12-hexaazatriphenylene (HAT-CN), the first hole injection auxiliary layer was evaporated at a pressure of 1×10 -5 Pa, the evaporation rate is 1nm / s, and the evaporation thickness is 5nm.
[0047] (3) The second hole injection auxiliary layer is vacuum evaporated on the surface of the first hole injection auxiliary layer. The material of the second hole injection au...
Embodiment 3
[0058] A method for preparing an organic electroluminescent device, comprising the following steps:
[0059] (1) A glass substrate is provided, and a conductive anode is prepared by electron beam evaporation on the surface of the glass substrate. The conductive anode is selected from Au, wherein,
[0060] The pressure when the conductive anode is evaporated by electron beam is 1×10 -4 Pa, the energy density of electron beam evaporation is 100W / cm 2 , the evaporation rate is 1nm / s, and the thickness of the conductive anode is 100nm.
[0061] (2) Vacuum-deposit the first hole injection auxiliary layer on the surface of the conductive anode. The material of the first hole injection auxiliary layer is 2,3,6,7,10,11-hexacyano-1,4,5, 8,9,12-hexaazatriphenylene (HAT-CN), the first hole injection auxiliary layer was evaporated at a pressure of 1×10 -4 Pa, the evaporation rate is 0.5nm / s, and the evaporation thickness is 2nm.
[0062] (3) The second hole injection auxiliary layer ...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com