Semiconductor interconnecting structure and manufacturing method thereof
A manufacturing method and interconnection structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as delamination and fracture at the interface between a metal interconnection layer and a metal adhesion layer, Achieve the effects of improving adhesion, increasing signal transmission rate, and increasing adhesion
Active Publication Date: 2014-12-24
SEMICON MFG INT (SHANGHAI) CORP
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[0005] The purpose of this application is to provide a semiconductor interconnection structure and its manufacturing method to solve the problem of delamination and fracture at the interface between the metal interconnection layer and the metal adhesion layer in the prior art
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[0030] The technical scheme of the present application will be described in detail below in conjunction with the specific implementation of the present application, but the following examples are only used to understand the present application, and cannot limit the present application. The embodiments in the present application and the features in the embodiments Combinable with each other, the application can be implemented in many different ways as defined and covered by the claims.
[0031] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, op...
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The invention provides a semiconductor interconnecting structure and a manufacturing method of the semiconductor interconnecting structure. The manufacturing method comprises the steps that a first dielectric layer is formed on a semiconductor device layer; a metal interconnecting layer is formed on the first dielectric layer, and chemico-mechanical polishing is carried out on the metal interconnecting layer; boron-nitrogen organic compounds are adopted as raw materials, and a boron-nitrogen film is formed on the metal interconnecting layer through a plasma chemical vapor deposition method; a metal adhesion layer is formed on the surface, with the boron-nitrogen film, of the semiconductor device layer; a diffusion blocking layer is formed on the metal adhesion layer; a second dielectric layer is formed on the diffusion blocking layer. The boron-nitrogen film is formed between the metal interconnecting layer and the metal adhesion layer, the contact stress between the boron-nitrogen film and the metal interconnecting layer and the contact stress between the boron-nitrogen film and the metal adhesion layer are lowered through an annular structure formed by boron and nitrogen in the boron-nitrogen film, and then the adhesion force between the boron-nitrogen film and the metal interconnecting layer and the adhesion force between the boron-nitrogen film and the metal adhesion layer are increased. A dielectric constant of the boron-nitrogen film is small, stray capacitance between the first dielectric layer and the second dielectric layer cannot be enhanced, and the signal transmission rate of a semiconductor device with the semiconductor interconnecting structure is improved.
Description
technical field [0001] The present application relates to the field of semiconductor technology, in particular, to a semiconductor interconnection structure and a manufacturing method thereof. Background technique [0002] In recent years, with the high integration of semiconductor integrated circuits, the wiring interval has been shrinking, so that the parasitic capacitance between the wiring is increasing. In the most advanced semiconductor integrated circuits that must operate at high speed, in order to avoid signal delay, it is necessary to reduce The parasitic capacitance between wirings, at present, the method of reducing the relative dielectric constant of the insulating film between wirings is commonly used to reduce the parasitic capacitance between wirings. [0003] Taking a commonly used metal interconnection structure as an example, the metal interconnection structure includes a semiconductor substrate; a first intermetallic dielectric layer located on the surfac...
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IPC IPC(8): H01L21/768H01L23/532
CPCH01L21/76829H01L21/76834H01L23/5329
Inventor 周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP