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Multilayer passivation anti-reflective coating of crystalline silicon cell and manufacturing method thereof

A crystalline silicon battery, passivation reduction technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problems of insignificant difference in refractive index, escape from silicon wafers, etc., to reduce the surface density of states and achieve good light transmittance , Improve the effect of short-wave response

Inactive Publication Date: 2014-12-24
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the silicon nitride film is a gradient film, the difference in refractive index between the film layers is not obvious, the probability of total reflection is small, and a large part will escape from the silicon wafer.

Method used

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  • Multilayer passivation anti-reflective coating of crystalline silicon cell and manufacturing method thereof
  • Multilayer passivation anti-reflective coating of crystalline silicon cell and manufacturing method thereof

Examples

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preparation example Construction

[0021] Such as figure 2 A multilayer passivation anti-reflection film for a crystalline silicon battery shown, its preparation method comprises the following steps:

[0022] (a) Cleaning, diffusion, and secondary cleaning of crystalline silicon cells;

[0023] (b) Use PECVD method to make silicon oxide film, wherein the flow rate of nitrogen gas is 15-25L / min, the flow rate of ammonia gas is 0.5-1L / min, the flow rate of laughing gas is 5-9L / min, and the flow rate of silane is 1-3L / min, Pressure 1-1.5Torr, electrode spacing 35-40mm, RF power 4-6kw, duration 10-15s, treatment temperature 300-400°C;

[0024] (c) Fabricate the first silicon nitride film on the silicon oxide film by PECVD method, wherein the flow rate of nitrogen gas is 15-25L / min, the flow rate of ammonia gas is 0.5-1L / min, the flow rate of silane is 2.5-3.5L / min, and the pressure 1-1.5Torr, the electrode spacing is 30-38mm, the RF power is 6-8kw, the duration is 8-15s, and the treatment temperature is 350-400°...

Embodiment 1

[0028] A multi-layer passivation anti-reflection film for a crystalline silicon battery. The passivation anti-reflection film is deposited on the N-type surface of a P-type crystalline silicon battery. The passivation anti-reflection film includes from bottom to top: a silicon oxide film , the first silicon nitride film, the second silicon nitride film, and the third silicon nitride film, wherein the thickness of the silicon oxide film is 20nm, the refractive index n1 is 1.5, the thickness of the first silicon nitride film is 10nm, and the refractive index n2 is 2.2, the thickness of the second silicon nitride film is 20 nm, the refractive index n3 is 2.1, the thickness of the third silicon nitride film is 35 nm, and the refractive index is 1.9.

[0029] Such as figure 2 A multilayer passivation anti-reflection film for a crystalline silicon battery shown, its preparation method comprises the following steps:

[0030] (a) Cleaning, diffusion, and secondary cleaning of the N-...

Embodiment 2

[0036] A multi-layer passivation anti-reflection film for a crystalline silicon battery. The passivation anti-reflection film is deposited on the N-type surface of a P-type crystalline silicon battery. The passivation anti-reflection film includes from bottom to top: a silicon oxide film , the first silicon nitride film, the second silicon nitride film, and the third silicon nitride film, wherein the thickness of the silicon oxide film is 15nm, the refractive index n1 is 1.6, the thickness of the first silicon nitride film is 15nm, and the refractive index n2 is 2.2, the thickness of the second silicon nitride film is 30nm, the refractive index n3 is 2.15, the thickness of the third silicon nitride film is 25nm, and the refractive index is 1.95.

[0037] Such as figure 2 A multilayer passivation anti-reflection film for a crystalline silicon battery shown, its preparation method comprises the following steps:

[0038] (a) Cleaning, diffusion, and secondary cleaning of the N-...

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Abstract

The invention discloses a multilayer passivation anti-reflective coating of a crystalline silicon cell. The passivation anti-reflective coating is deposited on a N-type face of the crystalline silicon cell and is characterized in that the passivation anti-reflective coating sequentially comprises a silicon oxide film, a first silicon nitride film, a second silicon nitride film and a third silicon nitride film from bottom to top, wherein the thickness of the silicon oxide film is 10-30nm, and the refractive index n1 is 1.3-1.6; the thickness of the first silicon nitride film is 8-15nm, and the refractive index n2 is 2.15-2.25; the thickness of the second silicon nitride film is 15-30nm, and the refractive index n3 is 2.05-2.15; the thickness of the third silicon nitride film is 30-50nm, and the refractive index is 1.9-2.0.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a multilayer passivation antireflection film for a crystalline silicon battery and a preparation method thereof. Background technique [0002] Potential-Induced Degradation (PID, Potential-Induced Degradation) commonly exists in traditional photovoltaic modules. According to the results of many domestic and foreign research institutions, the main reason for PID is: as the number of photovoltaic modules in series continues to increase, photovoltaic The probability that components will withstand high voltage-to-ground potential energy is also increasing. When one end of the system is grounded, the component farthest from the ground will generate a higher ground potential, which is close to 1000v in European design standards. Under such a high voltage, leakage current will be generated and power generation will be lost. The leakage current generally flows into the ground thro...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02P70/50
Inventor 刘仁中张辉杨红冬张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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