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power semiconductor module

A technology of power semiconductors and power electronics, applied in the field of power semiconductor modules, can solve the problems of high cost and high space requirements of the total module

Active Publication Date: 2017-09-26
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Multiple components are required for this, resulting in a high space requirement and high costs for the overall module

Method used

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Examples

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Embodiment Construction

[0017] figure 1 A power semiconductor module according to one example of the present invention is shown. The power semiconductor module comprises a power electronics circuit 4 , for example a rectifier circuit (three-phase inverter circuit) with three transistor half-bridges for generating a three-phase alternating current. In this example, the three-transistor half-bridge is built from six IGBTs (Insulated Gate Bipolar Transistor). Alternatively, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a bipolar transistor, or the like may also be used. exist figure 1 In the example, the half-bridge with 4 1 、4 2 、4 3 To represent. 4 per half bridge 1 、4 2 、4 3 can be determined by the DC voltage V DCLink (intermediate circuit voltage) to produce a corresponding output AC voltage. To this end each semiconductor switch 41 1 、42 1 、41 2 、42 2 、41 3 、42 3 It is controlled accordingly at its control terminals, the half bridge being formed from these semicond...

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PUM

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Abstract

A power semiconductor module is described, comprising: a power electronic circuit; a measuring circuit, which is designed to measure at least one physical parameter occurring in the power electronic circuit and to make available a measurement signal representing the measured parameter; A transmission unit with a primary side and a secondary side; a transmission circuit coupled to the secondary side; and an evaluation circuit coupled to the primary side and electrically separated from the transmission circuit by the transmission unit. The evaluation circuit is designed to supply an alternating voltage to the primary side of the transmission unit, whereby a corresponding primary current flows on the primary side, which in turn causes a secondary current on the secondary side of the transmission unit, which is supplied to the transmitter circuit. The transmitter circuit is designed to receive a measurement signal from the measurement circuit and to modulate the secondary current in accordance with the measurement signal, which results in a corresponding modulation of the primary current. The evaluation circuit is designed to evaluate the modulation of the primary current and to generate an output signal dependent on this evaluation.

Description

technical field [0001] The invention relates to a power semiconductor module with a power electronic circuit and a circuit arrangement for measuring and for transmitting measurement data, in particular with a device for measuring and transmitting parameters of the power electronic circuit, wherein the The measured data include the voltage supply of the circuit arrangement. Background technique [0002] In electronic circuits, various parameters are frequently measured for monitoring, in particular power semiconductors. High operating temperatures and thermal alternating stresses, for example, can significantly affect the component efficiency and the failure safety of the component. To avoid failure of components, for example temperature is measured so that safety measures can be taken if limit values ​​are exceeded. However, other parameters such as current or voltage can also be measured. [0003] In the rectifier (converter), for example temperature and intermediate cir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G08C19/02H04Q9/00H02M1/00
CPCG08C19/02H04Q9/00G01R31/2607
Inventor M.施吕特S.H.施米斯
Owner INFINEON TECH AG