Low-temperature polycrystalline silicon thin film manufacturing method, low-temperature polycrystalline silicon thin film and related devices

Abstract

The invention provides a low-temperature polycrystalline silicon thin film manufacturing method, a low-temperature polycrystalline silicon thin film and related devices and belongs to the field of display panel manufacturing. The low-temperature polycrystalline silicon thin film manufacturing method comprises the following steps: forming an amorphous silicon layer on a substrate; forming an alkali metal ion adsorption layer on the amorphous silicon layer; conducting quasi-molecular laser annealing on the substrate on which the alkali metal ion adsorption layer is formed to convert the amorphous silicon layer into a polycrystalline silicon layer; removing the alkali metal ion adsorption layer to form a polycrystalline silicon thin film on the substrate. According to the technical scheme provided by the invention, alkali metal ions in the low-temperature polycrystalline silicon thin film can be reduced, so that the threshold voltage drift of a low-temperature polycrystalline silicon thin film transistor is effectively prevented.

Description

technical field [0001] The invention relates to the field of display panel manufacturing, in particular to a low-temperature polysilicon thin film and a manufacturing method thereof, a low-temperature polysilicon thin film transistor, an array substrate and a display device. Background technique [0002] Organic light-emitting display (OLED) has attracted much attention due to its many advantages such as self-illumination, fast response, thinness, low power consumption and flexible display, and is considered to be the next generation of flat panel display technology. At present, OLED technology has been gradually applied to various electronic products, among which the active matrix organic light-emitting display (AMOLED) is famous for its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin. Become the main trend of OLED development. [0003] At present, polysilicon thin film transis...

AI Technical Summary

Problems solved by technology

The threshold voltage of a thin film transistor is related to many factors, including the doping of the crystalline silicon layer of the base layer, the thickness of the dielectric, the gate material and the dielectric or the charge condition at the interface between the dielectric and the semiconductor, etc., wherein the movable alkali metal ions ( Na + etc.), is one of the main reasons for the threshold voltage drift of thin film transistors. The polysilicon thin film prepared by the prior art often contains more mobile alkali metal ions, which makes the threshold voltage drift of the thin film transistor made of the polysilicon thin film, and then Affects the performance of thin film transistors

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