Power semiconductor device and manufacturing method thereof

Abstract

The invention provides a power semiconductor device and a manufacturing method of the power semiconductor device. The method comprises the steps of providing a semiconductor substrate; growing a first epitaxial layer with the first doping type and longitudinal and uniform doping on the front face of the semiconductor substrate; growing a second epitaxial layer with the first doping type on the first epitaxial layer, wherein the doping concentration of the second epitaxial layer is lower than the doping concentration of the first epitaxial layer; forming a base region, an emitting region, a gate dielectric layer and a gate structure of an IGBT device on the second epitaxial layer; thinning the semiconductor substrate from the back face of the semiconductor substrate until the surface of the first epitaxial layer is exposed, or further thinning the first epitaxial layer to reach the preset thickness, and using the remaining first epitaxial layer as a field stop region of the IGBT device; conducting ion implantation on the field stop region from the back face so that a collector region with the second doping type can be formed in the field stop region. According to the power semiconductor device and the manufacturing method of the power semiconductor device, the manufacturing difficulty of the field stop region of the IGBT device is reduced, and the problem that the breakage rate is high can be avoided.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a power semiconductor device and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) products have been developed to the sixth generation since the 1980s, specifically field-stop IGBTs. However, the formation process of the field stop structure in the traditional field stop IGBT product is limited by the wafer processing technology of the semiconductor device and the laser annealing process, which makes the processing of this type of IGBT product very difficult. [0003] In the traditional field stop type IGBT product manufacturing process, the formation process of the field stop structure mainly includes: forming the front structure of the IGBT product on the zone melting type (FZ, Float-Zone) substrate of the selected type and doping concentration; Afterwards, the substrate is groun...

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Problems solved by technology

However, the above method still has problems such as complex manufacturing process.

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