Photovoltaic device and method for producing same

Abstract

A photovoltaic device (10) is provided with a photovoltaic layer (3) formed by laminating, in order, a p-type semiconductor layer (31), an i-type semiconductor layer (32), and an n-type semiconductor layer (33). The p-type semiconductor layer (31) comprises p-type thin silicon films (311 to 313). The p-type thin silicon films (311 and 312) use pulse power created by superimposing low-frequency pulse power from 100 Hz to 1 kHz on high-frequency power from 1 MHz and 50 MHz as plasma excitation power. The density of the high-frequency power is 100 to 300 mW / cm­2, and the pressure during plasma processing is 300 to 600 Pa. Under conditions in which the substrate temperature during plasma processing is 140 to 190°C, thin silicon film having p-type conductivity is deposited, and thin silicon film is formed through nitriding. The p-type thin silicon film (313) is deposited under the abovementioned conditions.

Description

technical field [0001] The present invention relates to a photoelectric conversion device and a manufacturing method thereof. Background technique [0002] Conventionally, a photoelectric conversion device described in Patent Document 1 is known as a photoelectric conversion device that converts light energy into electrical energy. [0003] The photoelectric conversion device is formed of a structure having at least one photoelectric conversion layer having a pin structure in which a p-type semiconductor layer containing silicon atoms, an i-type semiconductor layer, and an n-type semiconductor layer are sequentially stacked. [0004] Furthermore, the p-type semiconductor layer contains 0.001 to 10 (atomic %) nitrogen atoms, and has a crystalline silicon phase. Thereby, the open voltage and the short-circuit current increase, and the photoelectric conversion efficiency can be improved. [0005] In addition, a photoelectric conversion device described in Patent Document 2 is...

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Problems solved by technology

[0012] However, in the process of depositing silicon semiconductor layers by the plasma CVD (Chemical Vapor Deposition) method used to manufacture large-area thin-film solar cells, it is difficult to achieve a uniform nitrogen concentration over the entire surface of the photoelectric conversion device.

[0013] The reason for this is considered to be that in the methods for producing the p-type semiconductor layer described in Patent Documents 1 and 2, when the electrode area exceeds 1 m 2 In such a large-area plasma CVD apparatus, it is difficult to ensure in-plane uniformity over the entire electrode area to supply the raw material gas, and it is difficult to ensure N due to the distribution of the electric field intensity in the electrode surface. 2 In-plane uniformity of gas decomposition energy

[0014] Furthermore, the conductive silicon nitride film described in Patent Document 3 satisfies the characteristics required for an intermediate layer disposed between two photoelectric conversion layers, and Patent Document 3 does not disclose that the film is made of a p-type semiconductor layer or an n-type semiconductor layer. Said, the manufacturing conditions used to increase the open voltage while maintaining a high fill factor (FF)

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