Mask graphic defect detection method and mask graphic defect detection system for

Abstract

The invention relates to a mask graphic defect detection method and a mask graphic defect detection system. The method comprises the steps of acquiring a mask image, namely obtaining a mask image to be detected and a normal mask image; extracting characteristics and converting formats, namely extracting edge characteristics and converting the edge characteristics into a geometric figure format for storage; performing filling, namely filling a blank region in a rectangular edge contour in a geometric figure; combining data, namely stacking the figures; simulating the contour, namely simulating the contour of a wafer; analyzing the key size of the simulated contour, namely measuring the key size, and calculating a difference value of the key size; and performing judgment, namely judging whether the mask defect is successfully restored according to the difference value of the key size. The invention further relates to the mask graphic defect detection system. The method and the system are simple and easy to implement and are obvious in effect; furthermore, the manufacturing cost of a photoetching mask plate manufacturing technology in the 45nm and even higher-order nano-level photoetching technology is effectively lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method and system for detecting mask pattern defects in a photolithography mask preparation process. Background technique [0002] Semiconductor integrated circuits (Integrated Circuit, referred to as IC), that is, semiconductor chips, need to go through multiple processes such as material preparation, plate making, photolithography, cleaning, etching, doping, and chemical mechanical polishing during the manufacturing process. most critical. The lithography process determines the advanced level of the semiconductor chip manufacturing process. It is precisely because of the great progress of the lithography technology that the integrated circuit manufacturing process has been brought from the micron era to the deep submicron era, and then into the nanometer era. The photolithography process requires a complete set (several pieces or up to ...

AI Technical Summary

Problems solved by technology

However, the traditional detection method of mask pattern defects using AIMS is technically complicated. After the era of sub-65nm technology nodes, the AIMS system needs to introduce the immersion method to detect the mask pattern defects of 45nm and higher-order nanoscale nodes

The structure of this AIMS system with immersion is very complicated, and it is very expensive to purchase a simulation wafer printer equipped with an AIMS system with immersion function, which makes the detection cost of mask pattern defects too high

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