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A method for improving the surface morphology of silicon microchannel plate

A silicon microchannel plate and surface topography technology, applied in the field of micro-electromechanical systems, can solve the problem of surface unevenness

Active Publication Date: 2016-09-21
EAST CHINA NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] For those who did not use the patent 200710037961.X to make electrochemical etching and perforation penetration in one step, grinding seems to be a very effective method to achieve the penetration of the microchannel plate, but the subsequent formation of the insulating layer will still encounter the same problem, as long as Oxidation process is used to make the insulating layer. Since the surface is a free end, due to the competition mechanism in the oxidation process, there will definitely be problems such as raised intersections that make the surface uneven.

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  • A method for improving the surface morphology of silicon microchannel plate

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Embodiment 1

[0024] Using a (100) silicon wafer, the (001) plane direction and the silicon wafer surface have an off-angle of 7°, and a resistivity of 8-12 ohm cm, using the process described in patent 200710037961.X to produce a silicon microchannel plate with a thickness of 240 microns, using a laser cutting process to make a set of samples with a diameter of 16 mm. 400nm SiO was sequentially deposited on both sides by PECVD process 2 and 150nm Si 3 N 4 , its cross-sectional structure is as figure 1 As shown, the substrate temperature is 400°C. After 1000°C, dry oxygen for 15 minutes, wet oxygen for 60 minutes, and then dry oxygen for 15 minutes, the surface of the microchannel plate remained flat. Then use atomic layer deposition technology to deposit AZO (a mixed crystal of aluminum oxide zinc oxide) 100nm, then deposit 20nm aluminum oxide, and finally use oblique sputtering method to sputter Ti / W alloy adhesion layer and nickel. Can be made into microchannel plates for image inte...

Embodiment 2

[0026] Using (100) silicon wafers, the resistivity is 8-12 ohm cm, using the process described in the patent 200710037961.X to produce a silicon microchannel plate with a thickness of 240 microns, and using a laser cutting process to make a group of diameters of 16 mm sample. 100nm SiO was sequentially deposited on both sides by PECVD process 2 and 150nm Si 3 N 4 , its cross-sectional structure is as figure 1 As shown, the substrate temperature is 400°C. After 1000°C, dry oxygen for 15 minutes, wet oxygen for 40 minutes, and then dry oxygen for 15 minutes, the surface of the microchannel plate remained flat.

[0027] Deposition of SnO by Atomic Layer Deposition 2 , with a thickness of 150nm, depositing Ti (Cr is also acceptable) and Ni on both sides of the microchannel plate to make an ethylene gas sensor.

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Abstract

The invention discloses a method for improving the surface topography of a silicon microchannel plate. The method comprises the following steps: (1) finishing etching in the silicon microchannel plate, and forming a circular wafer of a required size by adopting laser cutting; (2) depositing an SiO2 layer film being 300-500 nanometers and an Si3N4 layer film being 100-200 nanometers in sequence on both sides of the silicon microchannel plate by adopting PECVD (Plasma Enhanced Chemical Vapor Deposition), wherein double sides are symmetrical and equal in thickness; and (3) oxidizing according to the sequence of dry oxidation-wet oxidation-dry oxidation at the temperature of 900-1,100 DEG C to obtain the silicon microchannel plate of which the surface topography is modified, wherein the dry oxidation time is controlled at 15-20 minutes, and the wet oxidation time is controlled at 40-90 minutes. The method has the beneficial effect that the problem of surface unevenness, namely, junction recesses due to a competitive mechanism in an oxidation process since the surface belongs to a free end when an insulating layer is made by adopting an oxidation process is solved. Through adoption of a process for forming the insulating layer by adopting an oxidation method, the yield can be up to 80 percent.

Description

technical field [0001] The invention relates to a method for improving the appearance of a silicon microchannel plate, which belongs to the field of microelectromechanical systems. Background technique [0002] Today, when vacuum microelectronic devices have not completely faded out of the historical stage, micro-channel plates will be used for a period of time as a means of low-light detection and image signal amplification. Compared with glass microchannel plate devices, the advantages of silicon microchannel plate photomultiplier devices are very obvious. It has the advantages of low noise, long life, relatively low process cost and large-scale production. [0003] However, as a high-voltage device, the smoothness of the silicon microchannel plate surface, that is, its surface morphology, is the main factor affecting the performance and application of devices such as photomultiplier devices. Not only that, other applications based on silicon microchannel plates also requ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00H01J9/12
Inventor 王连卫徐雨薇徐少辉朱一平
Owner EAST CHINA NORMAL UNIV