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Implanted type flexible sensor based on organic transistor and preparation method

A flexible sensor, organic transistor technology, applied in sensors, instruments, scientific instruments, etc., can solve the problems of inflexibility of sensors and inability to implant brain tissue, and achieve the effect of improving the level of diagnosis and treatment

Active Publication Date: 2015-02-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

The main problem of existing electrophysiological signal recording sensors based on organic electrochemical transistors is that the sensors are either inflexible or cannot be implanted deep in brain tissue.

Method used

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  • Implanted type flexible sensor based on organic transistor and preparation method
  • Implanted type flexible sensor based on organic transistor and preparation method

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preparation example Construction

[0042] see figure 2 and refer to figure 1 , the invention provides a method for preparing an implantable flexible sensor based on an organic transistor, the steps of which are:

[0043] (1) Deposit aluminum on the silicon substrate as the first layer of sacrificial layer, the thickness of aluminum is 100nm-1000nm; then deposit the first layer of flexible polymer as the substrate support layer 10, the material of the substrate support layer is parylene , the thickness of which is 1 μm-15 μm;

[0044] (2) Then, the left metal source electrode 20 and the right metal source electrode 21 are fabricated on the substrate support layer 10 by photolithography stripping method, the thickness of the left metal source electrode and the right metal source electrode is 20nm-1 μm, and the width is 1 μm- 1mm, with a length of 1 μm-1mm, its main function is to conduct the impedance change of the organic conductive polymer active layer 30; then deposit a second layer of flexible polymer on t...

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Abstract

The invention discloses an implanted type flexible sensor based on an organic transistor. The implanted type flexible sensor comprises a substrate support layer, a left metal source electrode, a right metal leakage electrode, an insulating layer, an organic conductive polymer active layer, and a sheath structure, wherein the left metal source electrode is manufactured on one side in the middle of the surface of the substrate support layer; the right metal leakage electrode is manufactured on the other side of the middle of the surface of the substrate support layer and is spaced for a certain distance from the metal source electrode; the insulating layer is manufactured above the substrate support layer and above the left metal source electrode and the right metal leakage electrode; a disconnection window is formed in the middle of the insulating layer; the organic conductive polymer active layer is manufactured inside the opened window of the insulating layer and covers the left metal source electrode and the right metal leakage electrode; the conductive polymer active layer is sensitive to ion concentration caused by electric physiological activity; the sheath structure is used for promoting implanting the sensor into target tissue; and the sheath structure is manufactured above the opened side of the insulating layer. As the sheath structure is used for promoting implanting the whole flexible sensor into a deep part of brain tissue, single nerve cell signals can be conveniently recorded.

Description

technical field [0001] The invention belongs to the field of semiconductor technology, and in particular relates to the field of design and processing of an electrode sensor for bioelectrical physiological signal recording, and more specifically relates to an implantable flexible sensor based on an organic transistor and a preparation method thereof. Background technique [0002] Neurological diseases such as epilepsy, Parkinson's disease, senile dementia, and brain damage caused by stroke seriously threaten human health and life safety. Medical research has reportedly identified more than 500 brain disorders, ranging from migraines to schizophrenia and Alzheimer's. At present, the medical community has extremely limited understanding of the pathogenesis of these neurological diseases. The study of neural electrophysiological signals—electric field (or field potential) fluctuation signals generated by ion movement in vivo provides new and unprecedented perspectives on the m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00A61B5/04
Inventor 裴为华陈远方归强陈弘达
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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