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Preparation method of photoresist stripping solution

A technology of stripping liquid and photoresist, which is applied in the field of preparation of photoresist stripping liquid, can solve the problems of non-peeling, good phenol oil solubility, inconvenient cleaning, etc., and achieve the effect of easy removal and good stripping effect

Inactive Publication Date: 2018-04-10
江阴市化学试剂厂有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. O-dichlorobenzene stripping solution, its advantage is that o-dichlorobenzene has good water solubility and oil solubility, but its defect is that it cannot strip metallized metallization. For steaming aluminum and silver stripping, chlorine will Corrosion to aluminum and silver materials, making the product black and deteriorated
[0005] 2. Phenol stripping solution, easy to strip, but because phenol has the defect of good oil solubility and poor water solubility, it is inconvenient for subsequent cleaning after stripping

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for preparing a photoresist stripping solution according to the present invention comprises adding toluene or xylene as a solvent in a batching tank, feeding phenol into it, and mixing;

[0021] Dilute the emulsifier with water, add complexing agent, mix evenly, filter, add the filtered mixed solution of emulsifier and complexing agent into the batching tank, mix thoroughly, filter to obtain the finished product.

[0022] in:

[0023] The emulsifier is made by mixing OP-10 and TX-100 at a ratio of 2:1, and the amount of emulsifier added is 0.2% of phenol.

[0024] The complexing agent is a mixture of diethylenetriaminepentaacetic acid (DTPA) and hydroxyethylethylenediaminetriacetic acid (HEDTA) at a ratio of 1:1, and the addition amount of the complexing agent is 5% of the emulsifier.

[0025] The prepared finished product is used for stripping the photoresist of the aluminum base material, has a good stripping effect, does not corrode the aluminum base materi...

Embodiment 2

[0028] A method for preparing a photoresist stripping solution according to the present invention comprises adding toluene or xylene as a solvent in a batching tank, feeding phenol into it, and mixing;

[0029] Dilute the emulsifier with water, add complexing agent, mix evenly, filter, add the filtered mixed solution of emulsifier and complexing agent into the batching tank, mix thoroughly, filter to obtain the finished product.

[0030] in:

[0031] The emulsifier is made by mixing OP-10 and TX-100 at a ratio of 1:1, and the amount of emulsifier added is 0.1% of phenol.

[0032] The complexing agent is a mixture of diethylenetriaminepentaacetic acid (DTPA) and hydroxyethylethylenediaminetriacetic acid (HEDTA) at a ratio of 1:1, and the addition amount of the complexing agent is 5% of the emulsifier.

[0033] The prepared finished product is used for stripping the photoresist of the aluminum base material, has a good stripping effect, does not corrode the aluminum base materi...

Embodiment 3

[0036] The difference between this embodiment and embodiment 1 is:

[0037] The emulsifier is made by mixing OP-10 and TX-100 at a ratio of 1:2, and the amount of emulsifier added is 0.6% of phenol.

[0038] The prepared finished product is used for stripping the photoresist of the aluminum base material, has a good stripping effect, does not corrode the aluminum base material, and does not cause blackening or deterioration. After peeling off, rinse with water for super easy removal and no residue.

[0039] It is used for the stripping of photoresist on silver substrate, the stripping effect is good, it will not corrode the aluminum substrate, and there will be no blackening or deterioration. After peeling off, rinse with water for super easy removal and no residue.

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PUM

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Abstract

The invention relates to a preparation method of a photoresist stripping solution, which is characterized in that it is to add toluene or xylene as a solvent in a batching tank, pass phenol into it, and mix; dilute the emulsifier with water, and then add Complexing agent, after mixing evenly, after filtering, add to the batching tank, after mixing, filter to get the finished product; wherein: the emulsifier is OP-10 and TX-100 mixed at 0.5-2:1, the emulsifier The added mass is 0.1‑0.6% of phenol; the complexing agent is mixed with diethylenetriaminepentaacetic acid and hydroxyethylethylenediaminetriacetic acid in a mass ratio of 1:0.5‑2, and the added mass of the complexing agent is emulsified 3-8% of the dose. The photoresist stripping solution produced by the preparation method of the photoresist stripping solution of the present invention has the advantages of good oil solubility and good water solubility, and will not corrode aluminum and silver materials.

Description

technical field [0001] The invention relates to a method for preparing a photoresist stripping solution. Background technique [0002] In the manufacturing process of liquid crystal panels and touch screens, it is also necessary to form multi-layer precise microcircuits on silicon wafers or glass substrates through multiple graphic mask exposure and etching processes. After the microcircuits are formed, they are further stripped with photoresist. The liquid removes the photoresist that coats the protected areas of the microcircuit as a mask. In the production of capacitive touch screens, after sputtering the underlying ITO coating on the glass substrate by vacuum coating, it is necessary to use spin coating to make photoresist layer, exposure, development and demoulding on the ITO glass substrate for many times; liquid crystal display In the manufacturing process of the color filter of the device, in the process of coating photoresist by spin coating, slit coating or slit a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
Inventor 李虎宝翁蕾蕾
Owner 江阴市化学试剂厂有限公司