Method for making laser-powered miniature GAAS batteries
A laser energy supply and manufacturing method technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of increasing the difficulty of battery manufacturing process, reducing the leakage current at the bottom of the battery, and the thickness of the epitaxial layer, etc., to avoid Electrode interconnection short circuit, reduce difficulty, improve the effect of quality
Active Publication Date: 2016-12-28
天津恒电空间电源有限公司 +1
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Problems solved by technology
In order to reduce the bottom leakage current of the laser-powered micro-GaAs battery, most of the methods used are to increase the thickness of each growth layer in the GaAs epitaxial structure, especially to increase the thickness of the buffer layer (up to 10 μm ~ 20 μm), and achieved a reduction in battery bottom leakage. However, due to the large thickness of the epitaxial layer of the laser-powered micro-GaAs battery made by this method (up to 18 μ ~ 28 μm), not only the epitaxial growth is complicated, the cost is high, and the difficulty of the post-production process of the battery is increased.
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[0029] Step 1. Prepare the substrate
[0030] A semi-insulating GaAs material with a diameter of 100 mm, a thickness of 300 μm, and a radial deviation of 2° is selected as the figure 1 A GaAs substrate 9 for growing an epitaxial layer is shown;
[0031] Step 2. Anti-junction growth epitaxial layer
[0032] Using vapor phase epitaxy (MOVPE) technology, in step 1, a p-GaAs anti-junction layer 8 with a thickness of 0.3 μm, an i-GaAs undoped layer 7 with a thickness of 0.1 μm, and a n -GaAs buffer layer 6, n-GaAs window layer 5, 3 μm n-GaAs base layer 4, 1 μm p-GaAs emitter layer 3, 2 μm p-GaAs window layer 2, 0.2 μm p-GaAs re-doped layer 1; form a P-N-N-P reverse junction epitaxial structure;
[0033] Step 3. Make the sub-battery
[0034] ⑴ Photolithographic isolation groove pattern
[0035] After step 2 is completed, put the GaAs substrate in the glue applicator, coat a layer of BP218 positive photoresist with a glue thickness of more than 5 μm on the p-GaAs re-doped laye...
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Abstract
The invention relates to a method for manufacturing a laser powered miniature GaAs battery, which comprises preparing a GaAs substrate. The method is characterized by comprising the steps of: after reversely growing an epitaxial layer on the substrate, manufacturing sub-batteries; manufacturing a lower electrode and an upper electrode on each sub-battery, welding the upper electrode of each sub-battery with the lower electrode of an adjacent battery through interconnected electrodes for forming a serial-connected battery body, and performing reflection reducing film evaporation and scratching on the surface of the battery body, thereby preparing the laser powered miniature GaAs battery. According to the method, through a reverse-grown P-N-N-P epitaxial structure which is formed by an epitaxial PN and NP on the GaAs substrate, a reversed bias voltage is formed, thereby performing a current cut-off function, settling a problem of bottom leakage current caused by physical isolation between the sub-batteries and effectively reducing leakage current at the bottom of the battery. Furthermore the thickness of the epitaxial layer is smaller than 9 mu m, thereby reducing difficulties of later-period processes such as corrosion and isolation, and effectively improving epitaxial growth quality.
Description
technical field [0001] The invention belongs to the technical field of photoelectric conversion, in particular to a method for manufacturing a laser-powered micro-GaAs battery. Background technique [0002] The laser-powered micro GaAs battery is a battery that uses laser light as the energy of the light source to generate electricity. Since laser is a single-wavelength light source with the best frequency response, and sunlight is a full spectrum, the current generated by a laser-powered micro-GaAs battery in the same unit area is far greater than that generated by a solar-powered battery, forming a stable large Current effect, and the laser-powered micro-GaAs battery also has the characteristics of small size, light weight, free from radio waves and electromagnetic interference, and safety; currently, laser-powered micro-GaAs batteries are mainly used as driving power for micro-electromechanical systems (MEMS) , and has broad application prospects in various fields such a...
Claims
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IPC IPC(8): H01L31/18
CPCH01L31/03529H01L31/184H01L31/188Y02P70/50
Inventor 梁存宝杜永超肖志斌
Owner 天津恒电空间电源有限公司