High concentration Te doped light emitting diode epitaxial method

Abstract

The invention discloses a high concentration Te doped light emitting diode epitaxial method. The method comprises the following steps of (1) forming a buffer layer, a corrosion barrier layer and a coarsening layer respectively on a substrate, (2) spreading the first layer structure of a first type current spreading layer on the coarsening layer, (3) carrying out the epitaxial growth of first group of superlattice on the first layer structure of the first type current spreading layer, (4) carrying out the epitaxial growth of a first type current spreading layer second layer structure on the first group of superlattice, (5) repeating the structures in steps (3) and (4) until the epitaxial growth of a first type current spreading layer nth structure on an n-1 group of superlattice, and (6) carrying out epitaxial growth of a first type limiting layer, an active layer, a second type limiting layer, and a second type current spreading layer on the first type current spreading layer nth structure. According to the manufactured light emitting diode epitaxial structure, the adsorption of short-wavelength light by impurities can be reduced, and the light emitting efficiency of a light emitting diode is effectively raised.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a high-concentration Te-doped light-emitting diode epitaxy method. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and have been widely used. However, in the prior art, the requirements for light-emitting diodes with higher brightness and better luminous efficiency are increased. The epitaxial structure with quantum wells grown by metal-organic compound vapor phase epitaxy can achieve higher internal quantum efficiency; and the chip manufacturing method using inverted structures such as metal mirrors and surface roughening can significantly improve the external quantum efficiency of light-emitting diodes. [0003] However, adopting an inverted chip structure will cause the first conductivity type placed at the bottom of the active layer to be reversed to the top of the active layer. ...

AI Technical Summary

Problems solved by technology

However, the Te element is limited by its own physical and chemical characteristics. In the case of a large amount of Te impurities introduced during the epitaxial growth process, it is very easy to cause the crystal quality of the epitaxial layer to deteriorate.

However, the amount of Te impurity introduced is small, and there is a problem of poor current spreading effect.

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