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Pixel structure, manufacturing method thereof and display panel

A pixel structure and pixel electrode technology, applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of poor adhesion to the sealant and increase in cost, so as to improve the efficiency of the manufacturing process, increase the processing cost, The effect of increased pixel aperture ratio

Active Publication Date: 2015-02-11
NANJING CEC PANDA LCD TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, additional new materials will increase the cost
In addition, there are still problems in the compatibility of organic materials on the array substrate, such as the presence of ionic impurities and the weak adhesion to the frame glue, etc., which need to be overcome

Method used

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  • Pixel structure, manufacturing method thereof and display panel
  • Pixel structure, manufacturing method thereof and display panel
  • Pixel structure, manufacturing method thereof and display panel

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Embodiment Construction

[0044] The present invention provides a pixel structure, its manufacturing method, and a display panel. In order to solve the problem of improving the pixel aperture ratio and saving material cost in the prior art, the present invention uses insulating layers of different materials in the manufacturing process of the display panel, specifically Specifically, by forming an oxide insulating material layer on the insulating layers on both sides of the oxide semiconductor layer, the metal oxide used in the semiconductor device exhibits semiconductor characteristics; by forming a hydrogen-containing ( H) or other insulating material layers containing strong reducing elements, so that the metal oxide above the data lines of the array substrate exhibits conductor characteristics. Wherein, the oxide conductor layer serves as a shielding layer of the data line, which eliminates the influence of the signal of the data line on the pixel electrode, and can increase the aperture ratio of th...

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Abstract

The invention discloses a pixel structure, a manufacturing method thereof and a display panel. Insulating layers made of different materials are used, so that the semiconductor characteristics of metallic oxides used in a semiconductor device are represented, and the conductor characteristics of metallic oxides above the data line of an array substrate are represented. The insulating layers on the two sides of an oxide semiconductor layer are made of oxide insulating materials, and at least one side of the two sides of an oxide conductor layer is made of an insulating material containing hydrogen (H) or other strong reduction elements. The oxide conductor layer serves as the shielding layer of the data line, the influence of the signals of the data line to a pixel electrode is eliminated, and the aperture ratio of pixels can be improved. In the manufacturing process, the manufacturing working procedures of existing devices are fully utilized in the working procedure of preparing the shielding layer, the manufacturing method is simple and easy to realize, and the processing cost does not need to be increased.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a pixel structure containing a metal oxide semiconductor device, a manufacturing method thereof, and a display panel. Background technique [0002] Thin film transistor liquid crystal display (TFT-LCD) occupies a dominant position in the current flat panel display market due to its small size, low power consumption and no radiation. The TFT-LCD panel is formed by combining the array substrate and the color filter substrate. [0003] figure 1 It is a top view of a typical pixel on a TFT-LCD array substrate, and the components included in this pixel structure are designs commonly used in existing TFT-LCD devices. Such as figure 1 As shown, a pixel includes a scan line 11 , a common electrode line 12 , a semiconductor channel layer 13 , a data line 14 , a contact hole 15 and a pixel electrode 16 . Wherein, the scanning line directly below the semiconductor channel layer 13 is c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362G02F1/1368G02F1/136H01L27/12H01L21/77
CPCG02F1/136286G02F1/1368G02F1/136295H01L27/1225H01L27/1259
Inventor 王海宏焦峰严光能延威袁玲郭峰汤业斌欧阳海燕王海燕
Owner NANJING CEC PANDA LCD TECH
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